Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
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概要
- 論文の詳細を見る
To investigate the origin of the threshold voltage ($V_{\text{th}}$) change by impurity segregation in a fully silicided (FUSI) NiSi/SiO2 gate stack, for the first time we directly examined the vacuum work function ($\phi_{\text{vac}}$) of the electrodes, the electrical dipole moment ($D_{\text{inter}}$), and the chemical state of the impurity at the NiSi/SiO2 interface by backside X-ray photoelectron spectroscopy (XPS). We found that the impurity causes neither a change in the $\phi_{\text{vac}}$ nor the formation of a fixed charge in SiO2, and that the interface dipole is a dominant factor to cause the $V_{\text{th}}$ change. We propose that the origin of the interface dipole is the impurity atoms with large electronegativity bonded to both NiSi and SiO2 at the NiSi/SiO2 interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hase Takashi
System Devices Research Laboratories Nec Corporation
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Oshida Makiko
System Devices Research Laboratories Nec Corporation
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Takahashi Kensuke
System Devices Research Laboratories Nec Corporation
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Tatsumi Toru
System Devices And Fundamental Research Nec Corporation
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Ikarashi Nobuyuki
System Devices Research Laboratories Nec Corporation
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Manabe Kenzo
System Devices Research Laboratories Nec Corporation
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Watanabe Hirohito
System Devices Research Laboratories Nec Corp.
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Oshida Makiko
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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