Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• KAKIUCHI Hiroaki

  Department of Precision Science and Technology, Osaka University

• YASUTAKE Kiyoshi

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• WATANABE Heiji

  Department of Precision Science and Technology, Osaka University

• Yasutake Kiyoshi

  Graduate School Of Engineering Osaka University

• Yasutake K

  Osaka Univ. Osaka

• Yasutake Kiyoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Watanabe Heiji

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Kakiuchi Hiroaki

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Watanabe Heiji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Terai Yoshikazu

  Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University

• Yasutake K

  Graduate School Of Engineering Osaka University

• OHMI Hiromasa

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• TAWARA Naotaka

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• FUJIWARA Yasufumi

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University

• Ohmi Hajime

  School Of Engineering Nagoya University

• Fujiwara Yasufumi

  Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University

• Tawara Naotaka

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

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