Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy
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概要
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We investigated the changes in the electrical properties of a SiN/GaAs interface under high-temperature and high-humidity conditions, using photoreflectance (PR) spectroscopy and the electrical device characteristics. The PR spectra show the Franz-Keldysh oscillation (FKO); these spectra show that the period decreases after the sample is exposed to humidity. The electric field strength obtained from the FKO period indicates that the initial high electric field decreases with humidity exposure. Decomposed water molecules are supposed to diffuse into the SiN layer and react with the SiN/GaAs interface, causing a decrease in the interface states.
著者
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Hisaka Takayuki
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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Sasaki Hajime
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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Terai Yoshikazu
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Fujiwara Yasufumi
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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TERAI Yoshikazu
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
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Kadoiwa Kaoru
High Frequency and Optical Devices Works, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Sasaki Hajime
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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Hisaka Takayuki
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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