Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN
スポンサーリンク
概要
- 論文の詳細を見る
The effects of Mg and Si codoping on Eu luminescence properties have been investigated in Eu-doped GaN (GaN:Eu). The Mg codoping into GaN:Eu produced novel luminescence centers consisting of Eu and Mg, and increased photoluminescence (PL) intensity in Eu,Mg-codoped GaN (GaN:Eu,Mg). However, this increased PL intensity was quenched by thermal annealing in N<inf>2</inf>ambient, which is due to activation of Mg acceptors. In GaN:Eu,Mg codoped additionally with Si (GaN:Eu,Mg,Si), on the other hand, the Eu--Mg centers disappeared, while an additional luminescence center appeared. Furthermore, the additional luminescence center showed no quenching under N<inf>2</inf>annealing because Si donors compensated for the Mg acceptors in GaN. Thermal quenching of the luminescence center was also approximately half of that in GaN:Eu. These results indicate that the codoping with additional impurities in GaN:Eu is a powerful technique to control Eu luminescence centers for realization of improved device performance in red light-emitting diodes using GaN:Eu.
- 2013-08-25
著者
-
Terai Yoshikazu
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
-
Fujiwara Yasufumi
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
-
Wakamatsu Ryuta
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Lee Dong-gun
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Koizumi Atsushi
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
関連論文
- Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
- Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
- Investigation of β-FeSi_2/Si Heterostructures by Photoluminescence with Different Optical Configurations
- Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature
- Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
- Effect of Plasma Gases on Insulating Properties of Low-Temperature-Deposited SiOCH Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition
- Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy
- Metalorganic Vapor Phase Epitaxial Growth Parameter Dependence of Phase Separation in Miscibility Gap of InGaAsP
- Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate
- Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN
- Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate (Special Issue : Recent Advances in Nitride Semiconductors)
- Formation of Eu
- Formation of Eu³⁺ Luminescent Centers in Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition