Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate

スポンサーリンク

概要

• 論文の詳細を見る

• We report a study on Eu the luminescence properties of Eu-doped GaN (GaN:Eu) grown on a GaN substrate by organometallic vapor phase epitaxy (OMVPE). Thermal quenching of the Eu luminescence was suppressed using the GaN substrate, which is due to the preferential formation of a Eu luminescent site with a local structure with high symmetry. The preferential formation of this luminescent site was supported by the observation of strong near-band-edge emission. The strong near band-edge emission occurred as a result of suppressed formation of the dominant Eu luminescent site in GaN:Eu on a sapphire substrate, which is known to be coupled with a defect and to have a large capture cross section of photogenerated carriers.

• 2013-08-25

著者

• Terai Yoshikazu

  Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University

• Fujiwara Yasufumi

  Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University

• Wakamatsu Ryuta

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Lee Dong-gun

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Koizumi Atsushi

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Dierolf Volkmar

  Physics Department, Lehigh University, Bethlehem, PA 18015, U.S.A.

関連論文

• Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
• Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
• Investigation of β-FeSi_2/Si Heterostructures by Photoluminescence with Different Optical Configurations
• Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature
• Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
• Effect of Plasma Gases on Insulating Properties of Low-Temperature-Deposited SiOCH Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition
• Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy
• Metalorganic Vapor Phase Epitaxial Growth Parameter Dependence of Phase Separation in Miscibility Gap of InGaAsP
• Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate
• Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN
• Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate (Special Issue : Recent Advances in Nitride Semiconductors)
• Formation of Eu
• Formation of Eu³⁺ Luminescent Centers in Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition

もっと見る 閉じる

スポンサーリンク