Effect of Plasma Gases on Insulating Properties of Low-Temperature-Deposited SiOCH Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition
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概要
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Carbon-doped silicon oxide (SiOCH) films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS) at low temperatures (27–53 °C). The structural and insulating properties of the films deposited with Ar or N2 plasma were investigated. In the deposition with low plasma density and low substrate temperature, both plasmas produced films with high hydrocarbon (CHn) content. The films prepared using Ar plasma showed a low leakage current of $7\times 10^{-10}$ A/cm2 at 1 MV/cm due to the incorporation of CHn groups, while the films with high CHn content prepared using N2 plasma showed poor insulating properties. The deposition using N2 plasma formed films with a defective structure, resulting in a higher etch rate than that of the films deposited with Ar plasma. The deposition with the low-density plasma of inert Ar gas is suitable for the low-temperature deposition of SiOCH films with high resistivity.
- 2007-04-30
著者
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Terai Yoshikazu
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Yoshizako Yuji
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Yamaoka Keisuke
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Fujiwara Yasufumi
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Terai Yoshikazu
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Okada Naomichi
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Fujiwara Yasufumi
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yamaoka Keisuke
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yoshizako Yuji
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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