Fujiwara Yasufumi | Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University

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概要

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著作論文

Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
Investigation of β-FeSi_2/Si Heterostructures by Photoluminescence with Different Optical Configurations
Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature
Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
Effect of Plasma Gases on Insulating Properties of Low-Temperature-Deposited SiOCH Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition
Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy
Metalorganic Vapor Phase Epitaxial Growth Parameter Dependence of Phase Separation in Miscibility Gap of InGaAsP
Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate
Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN
Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate (Special Issue : Recent Advances in Nitride Semiconductors)
Formation of Eu
Formation of Eu³⁺ Luminescent Centers in Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition

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