Metalorganic Vapor Phase Epitaxial Growth Parameter Dependence of Phase Separation in Miscibility Gap of InGaAsP
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概要
- 論文の詳細を見る
The generation mechanism of the immiscibility of InGaAsP grown by metalorganic vapor phase epitaxy (MOVPE) is investigated. The growth condition dependence of the immiscibility is examined in detail using particular photoluminescence (PL) characteristics observed in the boundary composition between stable and unstable compositional regions. A lower growth rate or a larger V/III ratio is effective for suppressing phase separation. To explain this growth condition dependence, some factors related to surface energy should be taken into consideration.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-02-25
著者
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TAKEMI Masayoshi
High Frequency & Optical Device Works., Mitsubishi Electric Corporation
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Fujiwara Yasufumi
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Ono Kenichi
High Frequency & Optical Device Works, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Fujiwara Yasufumi
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Takemi Masayoshi
High Frequency & Optical Device Works, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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