Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
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概要
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High-quality epitaxial Si films have been grown at low temperatures (500–600 °C) by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) with a high growth rate (0.31 μm/min at 600 °C averaged over the 4-in. wafer). In contrast to the previous reports on other low-temperature CVD Si, the films in the present study are defect-free as observed by transmission electron microscopy and selective etching, and show no oxygen and carbon pileups at the film/substrate interface. To characterize defect-free epitaxial films with high sensitivity, we employed a photoluminescence (PL) method. When the epitaxial layer has better quality than the substrate, PL spectrum at 4.2 K mainly reveals the property of the substrate. On the other hand, room temperature PL measurements clearly show that the PL intensities of the surface-passivated epitaxial Si samples are much higher than that of Czochralski (CZ)-Si, which indicates a longer minority carrier recombination lifetime in the epitaxial Si layer than the bulk lifetime in CZ-Si.
- 2007-04-30
著者
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kakiuchi Hiroaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Terai Yoshikazu
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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OHMI Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Fujiwara Yasufumi
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Tawara Naotaka
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Terai Yoshikazu
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Tawara Naotaka
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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