High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• KAKIUCHI Hiroaki

  Department of Precision Science and Technology, Osaka University

• MORI Yuzo

  Department of Precision Science and Technology, Osaka University

• YASUTAKE Kiyoshi

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• WATANABE Heiji

  Department of Precision Science and Technology, Osaka University

• Yasutake Kiyoshi

  Graduate School Of Engineering Osaka University

• Yasutake K

  Osaka Univ. Osaka

• Yasutake Kiyoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Watanabe Heiji

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Kakiuchi Hiroaki

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Mori Yuzo

  Department Of Applied Physics Faculty Of Engineering Osaka City University

• Watanabe Heiji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Yasutake K

  Graduate School Of Engineering Osaka University

• OHMI Hiromasa

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• WAKAMIYA Takuya

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• YOSHII Kumayasu

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• Wakamiya Takuya

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Mori Yuzo

  Osaka University Dept. Of Precision Science And Technology Graduate School Of Eng.

• Ohmi Hajime

  School Of Engineering Nagoya University

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