A New Emission Band Related to EL2 in GaAs

スポンサーリンク

概要

• 論文の詳細を見る

• A new emission band peaking at 1.0 eV in semi-insulating and n-type GaAs has been observed at 70 K in the anti-Stokes and Stokes regions upon excitations with 1.34 μm and 1.06 μm laser lights, respectively. The intensity of the band is correlated to that of the 0.63 eV photoluminescence band associated with the EL2 deep level when it is varied by photoquenching, sample change, and excitation intensity. The peak energy is close to the energy of intracenter transition of EL2 and the energy between EL2^0 and the L-valley of GaAs. An excitation mechanism through a metastable state is tentatively proposed to explain the 73 meV anti-Stokes shift at 70 K.

• 社団法人応用物理学会の論文
• 1989-12-20

著者

• Mori Y

  Research Center For Ultra-precision Science And Technology Graduate School Of Engineering Osaka Univ

• Mori Yusuke

  Graduate School of Engineering, Osaka University

• Mori Yoshihiro

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.

• Chiba Y

  Nagaoka Univ. Technol. Nagaoka Jpn

• Mori Y

  Osaka Univ. Suita Jpn

• OHKURA Hiroshi

  Graduate School of Science and Technology, Niigata University

• Mori Yuzo

  Department Of Applied Physics Faculty Of Engineering Osaka City University

• Ohkura H

  Osaka City Univ. Osaka

• Ohkura Hiroshi

  Department Of Applied Physics Osaka City University

• Ohkura H

  Okayama Univ. Science Okayama Jpn

• Ohkura Hiroshi

  Graduate School Of Science And Technology Niigata University

• Kamoda Hiroki

  Department Of Applied Physics Osaka City University

• CHIBA Yoshinori

  Department of Applied Physics, Faculty of Science, Science University of Tokyo

• YOSHIMURA Yoshimasa

  Department of Applied Physics, Osaka City University

• Chiba Yoshinori

  Department Of Applied Physics Faculty Of Science Science University Of Tokyo

• Yoshimura Yoshimasa

  Department Of Applied Physics Osaka City University

• Mori Yuzo

  Department Of Mechanical Engineering Kochi National College Of Technology

関連論文

• High-Field Faraday Effect of Tb-Doped Glass Above Paramagnetic Saturation
• High-Spatial-Resolution Machining Utilizing Atmospheric Pressure Plasma : Machining Characteristics of Silicon
• Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization Machining
• Ultraprecision Machining Utilizing Numerically Controlled Scanning of Localized Atmospheric Pressure Plasma
• Density of States of Single-Walled Carbon Nanotubes Grown on Metal Tip Apex
• Scanning Tunneling Microscopy and Spectroscopy Study of a Steep Facet Surface on Ge Nanocrystal Grown on Si(111)
• Scanning Tunneling Spectroscopy Study of the ZnO(0001)-Zn Surface
• Electrical Characterization of Metal-Coated Carbon Nanotube Tips
• Application of Femtosecond Laser Ablation for Detaching Grown Protein Crystals from Glass Capillary Tube(METHODS)
• Hard X-ray Diffraction-Limited Nanofocusing with Kirkpatrick-Baez Mirrors
• Two-dimensional Submicron Focusing of Hard X-rays by Two Elliptical Mirrors Fabricated by Plasma Chemical Vaporization Machining and Elastic Emission Machining
• Formation of Vertically Aligned Carbon Nanotubes by Dual-RF-Plasma Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
• High-Quality Organic 4-Dimethylamino-N-Methyl-4-Stilbazolium Tosylate (DAST) Crystal for Electro-Optic Measurement(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
• Electro-Optic Measurement Using High-Quality : 4-dimethylamino-N-methyl-4-stilbazolium Tosylate (DAST) Crystal
• 2P-119 ヒトIgGに結合するRNAアプタマー複合体の立体構造(核酸・相互作用,複合体,第46回日本生物物理学会年会)
• New Technique of Manipulating a Protein Crystal Using Adhesive Material
• Solution-Stirring Method Improves Crystal Quality of Human Triosephosphate Isomerase(ENZYMOLOGY, PROTEIN ENGINEERING, AND ENZYME TECHNOLOGY)
• Processing of Membrane Protein Crystal Using Ultraviolet Laser Irradiation(METHODS, Advances in Biomedical Science and Engineering)
• Femtosecond Laser Processing of Protein Crystals in Crystallization Drop
• Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
• 2P007 大腸菌由来スペルミジンアセチルトランスフェラーゼのX線結晶構造解析(蛋白質-構造,第48回日本生物物理学会年会)
• Growth and Optical Characterization of Cr^YAB and Cr^YGAB Crystal for New Tunable and Self-Frequency Doubling Laser
• Metal-coated Carbon Nanotube Tips for Nanoscale Electrical Measurements
• Metal-Coated Carbon Nanotube Tip for Scanning Tunneling Microscope
• Stark Effects in F Center Emission in KBr, KI, RbBr, and RbI Crystals
• Pt/Ba_xSr_TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory
• Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
• Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
• Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
• Investigation of the Gd Variation of Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Application : Structure and Mechanical and Thermal Properties of Condensed Matter
• Photoinduced Damage in Gd_Y_xCa_4O(BO_3)_3 Crystals
• Metastable States Observed by Optical Absorption of DX Centers in Al_xGa_As:Te
• Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
• The Microwave Study of Bottleneck Effect and Relaxation of Resonant Phonons Emitted from the Tunneling Li^+ Ion in KCl
• 9.4-GHz Pulse Paraelectric Resonance of KCI:Li at Zero Electric Field
• Spin Relaxation Processes via Tunneling Effect of the Li+ Ion in the FA(Li) Centers in Alkali Halide Crystals (Selected Topics in Semiconductor Physics) -- (Impurity and Disordered States)
• The Anomalous Spin-Lattice Relaxation of the F_A(Li) Centers in KBr
• First-Principles Evaluations of Machinability Dependency on Powder Material in Elastic Emission Machining
• Plasma Chemical Vaporization Machining (CVM) for Fabrication of Optics
• Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation
• Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition
• Synthesis of Bulk GaN Single Crystals Using Na-Ca Flux : Semiconductors
• Slope Nucleation Method for the Growth of High-Quality 4-Dimethylamino-Methyl-4-Stibazolim-Tosylate (DAST) Crystals
• The Indirect Determination of the Cross Section of Stimulated Emission of the F Center in KCl
• Highly Excited Odd-Parity Resonant States of ^6Li around E_x≃18〜27 MeV with the Complex-Scaled ^3He+t Resonating Group Method : Nuclear Physics
• A Review on Highly Excited States of Light Λ-Hypernuclei
• Highly Excited States of ^6_ΛLi by the Microscopic Cluster Model : Nuclear Physics
• ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
• ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
• 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
• AlGaInP Visible Semiconductor Lasers : COMPONENTS
• Effect of Low-Frequency Vibration Method on Growing Huntite-Borate Crystals
• Incoherence Effect of Single-Mode Pump on Second-Harmonic Generation
• Theoretical Analysis of Multimode Pumped Second-Harmonic Generation
• High-Efficiency Intracavity Frequency-Doubled CW and Tunable Ti:Sapphire Laser
• Internal Resonating of Second-Harmonic Wave by Scanning Fundamental Cavity Length
• Nonlinear Optical Properties of Cesium Lithium Borate
• Promotion of Crystal Nucleation of Protein by Semi-Solid Agarose Gel
• Mecharrism Activating the 2^1Ag State in all-trans-β-Carotene Crystal to Resonance Raman Scattering
• High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
• High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
• Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
• High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes
• Effective Protein Crystallization Using Crystal Hysteresis
• Application of Stirring Method to Micro-Scale and Vapor Diffusion Protein Crystallization
• Synthesis of Low-Resistivity Aluminum Nitride Films Using Pulsed Laser Deposition
• 387-nm Generation in Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Utilization for 193-nm Light Source
• A Palm-Size Ultraviolet Laser Using a Combination of a Monolithic Wavelength Converter and an Optical Fiber
• Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
• 355-nm UV Light Generation in High-Quality CsB_3O_5 Fabricated by Post-Growth Heat Treatment
• Optical Detection of the Hyperfine Interaction of the F Center in KCL in the Absence of Resonant Oscillating Fields
• The Spin-Mixing Parameters in the Optical Pumping Cycle of the F Centers in KBr and KI
• On "the Anomalous Effect" of the Magnetic Circular Polarization of the F Center Luminescence
• Magnetic Nature of the Relaxed Excited State of F Centers and Spin Flipping Processes in the Optical Pumping Cycle
• Influence of Crystallinity on the Bulk Laser-Induced Damage Threshold and Absorption of Laser Light in CsLiB_6O_ Crystals : Optics and Quantum Electronics
• Crystal Growth of Thermoelectric Material Na_xCoO_ by a Flux Method : Structure and Mechanical and Thermal Properties of Condensed Matter
• The Spin-Lattice Relaxation Processes of the Relaxed Excited State of F Centers in KBr
• Growth of Crystalline Silicon on a Cryogenic Substrate by Photochemical Reaction in a Condensed Phase
• The Resonant Secondary Emission of the F Center in KCI at 80 K
• Generation of Tunable Near-UV Laser Radiation by Type-I Second-Harmonic Generation in a New Crystal, K2Al2B2O7 (KABO)
• Optical Detection of the Paramagnetic Resonance of the Relaxed Excited State of the F_A (Na) Centers in KCl
• Synthesis of GaN Crystal Using Gallium Hydride
• The Growth of K_2Al_2B_2O_7 (KAB) Crystal by Modified Middle Seeded Solution Growth (MSSG) Method : Structure and Mechanical and Thermal Properties of Condensed Matter
• De-excitation Processes of the Optically Excited F Centers Part I
• A New Emission Band Related to EL2 in GaAs
• The Luminescence and ESR of a Synthetic Emerald and the Natural Ones Mined from Santa Terezinha in Brazil
• Transverse Spin Relaxation Processes of the F_A (Li) Centers in KCl and KBr at LHeT
• ENDOR of the F_Δ(Li) Center in KBr at Liquid He Temperatures
• Anomalous Transverse Spin Relaxation Time of the F_A (Li) Centers in KCl and KBr
• ESR of Ti^ Ions in Laser-Quality Chrysoberyl : Magnetism, Magnetic Materials and Devices
• Photoluminescence Spectra of Silver-Doped ZnSe Grown by MBE
• Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
• Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation
• Growth of Protein Crystal at Interface between Two Liquids Using Slow Cooling Method : Structure and Mechanical and Thermal Properties of Condensed Matter
• Spin-Lattice Relaxation Time of the F_A Centers in KCl
• Molecular Orientation of all-trans-β-Carotene in Spin-Coated Film and in Langmuir-Blodgett Film as Detected by Polarized Optical Absorption and Reflection Spectroscopies
• Anomalous Spin-Lattice Relaxation of the F_A(Li) Centers in KCl
• ESR Evidence of the Existence of the Rubidium-F_A Color Centers in KCl
• Spin Relaxation of the F_A (Li) Center in KCl Due to the Hyperfine Interaction Modulated by the Tunneling Li^+ Ion : Electric Field Effects on the Spin Relaxation

もっと見る 閉じる

スポンサーリンク