Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation

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概要

• 論文の詳細を見る

• Electroluminescence has been obtained from ZnSe p-n junctions. ZnSe films were grown on n-type GaAs substrates by molecular beam epitaxy. The dopant used for n-type ZnSe was Ga, and p-type ZnSe was formed by nitrogen ion implantation into undoped ZnSe which was grown on the Ga-doped ZnSe layer. Rapid thermal annealing was performed using an infrared lamp in N_2 ambient The formation of a p-n junction was confirmed by measuring electron beam-induced current. The electroluminescence spectra were dominated by two peaks of band-edge emission at 446 and 459 nm at 77 K.

• 社団法人応用物理学会の論文
• 1989-04-20

著者

• Mori Yusuke

  Graduate School of Engineering, Osaka University

• Mori Yoshihiro

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.

• AKIMOTO Katsuhiro

  Institute of Applied Physics, University of Tsukuba

• Mori Y

  Osaka Univ. Suita Jpn

• Akimoto Katsuhiro

  Sony Corporation Research Center

• MORI Yoshifumi

  Sony Corporation Research Center

• Akimoto K

  Institute Of Applied Physics University Of Tsukuba

• Miyajima T

  Sony Corp. Res. Center Kanagawa Jpn

• MIYAJIMA Takao

  Sony Corporation Research Center

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