The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_<1-x>As Grown by MOCVD
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概要
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The low temperature photoluminescence peak at about 100 meV below the band-to-band transition in n-type Al_xGa_<1-x>As grown by MOCVD has been investigated. The peak was found to appear only at lower growth temperatures (T_g≲740℃) and to appear for a series of samples grown immediately after an exchange of one section of the gas flow system. The presence of the peak was found to be closely related to the quality of the epitaxial layer.
- 社団法人応用物理学会の論文
- 1984-07-20
著者
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MORI Yoshifumi
Sony Corporation Research Center
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Kaneko Kunio
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Frontier Science Laboratories
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SAKAMOTO Masamichi
Sony Corporation Semiconductor Group, Atsugi Plant
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OKADA Tsunekazu
Sony Corporation Semiconductor Group, Atsugi Plant
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Okada Tsunekazu
Sony Corporation Semiconductor Group Atsugi Plant
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Sakamoto Masamichi
Sony Corporation Semiconductor Group Atsugi Plant
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