Heterointerface Field Effect Transistor with 200 A-Long Gate : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
AlGaAs/GaAs heterointe face field effect transistor (FET) with a gate-length comparable with electron de Broglie wavelength has been fabricated for the first time by the electron-beam-infuded resist process, which demonstrates the possibility of 'universal' FET. The transconductance maximum is found to be at the gate length three times as large as the channel depth.
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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ISHIBASHI Akira
Sony Corporation Research Center
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MORI Yoshifumi
Sony Corporation Research Center
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Funato Kenji
Sony Corporation Research Center
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