Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• Blue electroluminescence has been obtained from ZnSe p-n junctions. ZnSe films were grown on n-type GaAs(100) substrates by molecular beam epitaxy. The dopants used for n-and p-type ZnSe were Ga and O, respectively. The electron-beam-induced current strongly suggests the formation of a p-n junction. The built-in Potential of the p-n junction and carrier concentration of p-type ZnSe layer estimated from the capacitance-voltage relation were about 2.3 V and 1.2 × 10^<16>cm^<-3>, respectively. The electroluminescence spectra from the p-n junction were dominated by band-edge emissions of 466 nm at room temperature and 446 nm at 77 K.

• 社団法人応用物理学会の論文
• 1989-04-20

著者

• Mori Yusuke

  Graduate School of Engineering, Osaka University

• Mori Yoshihiro

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.

• AKIMOTO Katsuhiro

  Institute of Applied Physics, University of Tsukuba

• Mori Y

  Osaka Univ. Suita Jpn

• Akimoto Katsuhiro

  Sony Corporation Research Center

• MORI Yoshifumi

  Sony Corporation Research Center

• Akimoto K

  Institute Of Applied Physics University Of Tsukuba

• Miyajima T

  Sony Corp. Res. Center Kanagawa Jpn

• MIYAJIMA Takao

  Sony Corporation Research Center

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