Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p^+-ZnSe by Excimer Laser Doping Technique
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
-
AOKI Toru
Graduate School of Electronic Science and Technology, Shizuoka University
-
HATANAKA Yoshinori
Graduate School of Electronic Science and Technology, Shizuoka University
-
Hatanaka Yoshinori
Graduate School Of Electronic Science And Technology Shizuoka University
-
ISHIBASHI Akira
Sony Corporation Research Center
-
Aoki Toru
Graduate School Of Electronic Science And Technology Shizuoka University
-
NAGAI Masaharu
Sony Corporation Research Center
-
Hatanaka Yoshinori
Graduate School Electronic Science And Technology:research Institute Of Electronics Shizuoka Univers
関連論文
- Dependence of Cathodoluminescent and Electrical Properties of Phosphors with Conducting Layer by Sol-Gel Method on Layer Thickness
- Improvement of Low Voltage Cathodoluminescent Properties of Zinc Sulfide Phosphors by Sol-Gel Method
- Extended X-Ray Absorption Fine Structure Study of ZnSSe and ZnMgSSe
- Zn_Cd_xO/ZnO Heterostructures for Visible Light Emitting Devices
- Characterization of Wurtzite Zn_Cd_xO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Substrate
- Preparation of Heavily N-Type ZnSe Doped by Iodine in Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition
- Growth of p-type ZnSe Films by Radical Assisted MOCVD Method
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- Thin Film Deposition in the Afterglows of N_2 and H_2 Microwave Plasmas
- The Role of Hydrogen Atoms in Afterglow Deposition of Silicon Thin Films
- Optoelectrical Properties of Hydrogenated Amorphous Silicon-Polycrystalline Cadmium Telluride Heterojunctions
- Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p^+-ZnSe by Excimer Laser Doping Technique
- High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes
- Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions
- Deposition of SiN_x Thin Film Using μ-SLAN Surface Wave Plasma Source
- Heterointerface Field Effect Transistor with 200 A-Long Gate : Semiconductors and Semiconductor Devices
- Characterization of ZnMgSSe-Based Wide-Gap Laser Diodes
- Reverse Current Characteristics of Hydrogenated Amorphous Silicon-Crystalline Silicon Heterojunctions
- Variation of the Recombination Coefficient of Atomic Oxygen on Pyrex Glass with Applied RF Power
- A New Concept for the High-Speed Optical Position-Sensitive Devices
- New Release Ports Applicable to High-Pressure Gear Pumps and Their Effectiveness
- Gear Pumps with New Release Ports Suitable for Various Running Conditions : Theory for the Release Ports and Some Experimental Results
- Effects of Difference in Roller Hardness on Rolling Contact Fatigue : Vibration, Control Engineering, Engineering for Industry
- Studies on Friction Welding of Carbon and Alloy Steels : 3rd Report : Adequate Welding Conditions for High Alloy Steels and Distributions of Alloy Elements near Weld Interface
- Design and Manufacture of a CNC Gear Grinder Capable of Mirrorlike Finishing
- Design and Manufacture of Precision Gear Grinder With CBN Wheel and Load Carrying Capacity of Gears Ground : 1st Report, Trial Gear Grinder Capable of Mirror Finishing and Surface Durability of Gear Pairs
- STUDIES ON FRICTION WELDING OF CARBON AND ALLOY STEELS : 1st Report, A New Method for Determining Welding Conditions
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- Downstream Gas Temperature Variation of Glow and Plasmoidal Oxygen Radio Frequency Discharges
- Characterization of Wurtzite Zn1-xCdxO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Characterization of MgxZn1-xO Films Grown by Remote-Plasma-Enhanced Metalorganic Chemical Vapor-Deposition using bis-Ethylcyclopentadienyl Magnesium