Reverse Current Characteristics of Hydrogenated Amorphous Silicon-Crystalline Silicon Heterojunctions
スポンサーリンク
概要
- 論文の詳細を見る
The electrical properties of heterojunctions of p-type a-Si:H and n-type c-Si have been investigated by measuring I-V and C-V characteristics. The C-V characteristics revealed that there was something (what is called interface defect states) to obstruct the spread of the depletion layer in c-Si at the interface of a-Si:H and c-Si. The I-V characteristics showed that these interface defect states assisted the generation of a reverse current. The calculation suggested that only the interface defect states near the midgap influenced the reverse current. Consequently, to realize a low dark current applicable to imaging devices, it was necessary to decrease the number of interface defect states.
- 社団法人応用物理学会の論文
- 1987-01-20
著者
-
Hatanaka Yoshinori
Graduate School Electronic Science And Technology:research Institute Of Electronics Shizuoka Univers
-
Mimura Hidenori
Graduate School Electronic Science And Technology
関連論文
- Dependence of Cathodoluminescent and Electrical Properties of Phosphors with Conducting Layer by Sol-Gel Method on Layer Thickness
- Improvement of Low Voltage Cathodoluminescent Properties of Zinc Sulfide Phosphors by Sol-Gel Method
- Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Substrate
- Preparation of Heavily N-Type ZnSe Doped by Iodine in Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition
- Thin Film Deposition in the Afterglows of N_2 and H_2 Microwave Plasmas
- The Role of Hydrogen Atoms in Afterglow Deposition of Silicon Thin Films
- X-Ray Imaging Sensor Using a Polycrystalline Cadmium Telluride-Hydrogenated Amorphous Silicon Heterojunction
- Optoelectrical Properties of Hydrogenated Amorphous Silicon-Polycrystalline Cadmium Telluride Heterojunctions
- Amorphous Silicon Resistive Sea for Silicon Vidicon Targets
- Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p^+-ZnSe by Excimer Laser Doping Technique
- Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions
- Deposition of SiN_x Thin Film Using μ-SLAN Surface Wave Plasma Source
- Surface Treatment Effect of (NH4)2Sx on $ p$-type GaAs Field Emitter Arrays
- Reverse Current Characteristics of Hydrogenated Amorphous Silicon-Crystalline Silicon Heterojunctions
- Variation of the Recombination Coefficient of Atomic Oxygen on Pyrex Glass with Applied RF Power
- Soft X-Ray Image Sensor Using Hydrogenated Amorphous Silicon
- A New Concept for the High-Speed Optical Position-Sensitive Devices
- Spot Size Converter with Vertically Tapered Waveguide Core Fabricated by Sputter Etching
- Downstream Gas Temperature Variation of Glow and Plasmoidal Oxygen Radio Frequency Discharges