Preparation of Heavily N-Type ZnSe Doped by Iodine in Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-10-15
著者
-
Noda Daiji
Graduate School Of Electronic Science And Technology Shizuoka University
-
Aoki T
Research Institute Of Electronics Shizuoka University
-
Aoki Toru
Research Institute Of Electronics Shizuoka University
-
AOKI Toru
Graduate School of Electronic Science and Technology, Shizuoka University
-
NAKANISHI Yoichiro
Graduate School of Electronic Science and Technology, Shizuoka University
-
HATANAKA Yoshinori
Graduate School of Electronic Science and Technology, Shizuoka University
-
Nakanishi Yoichiro
Graduate School Of Electronic Science And Technology Shizuoka University
-
Hatanaka Y
Shizuoka Univ. Hamamatsu Jpn
-
Hatanaka Y
Research Institute Of Electronics
-
Hatanaka Y
Research Institute Of Electronics Shizuoka University
-
Hatanaka Yoshinori
Research Institute Of Electronics Shizuoka University:graduate School Of Electric Science And Techno
-
Aoki T
Department Of Electrical Engineering And Electronics College Of Engineering Osaka Sangyo University
-
Aoki Toru
Graduate School Of Electronic Science And Technology Shizuoka University
-
Aoki T
Department Of Electronics And Information Systems Osaka University
-
Aoki T
Jamstec
-
Hatanaka Yoshinori
Graduate School Electronic Science And Technology:research Institute Of Electronics Shizuoka Univers
-
Hatanaka Y
Graduate School Of Electronic Science And Technology Shizuoka University
関連論文
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
- In situ observation of composition profiles in the solution by X-ray penetration method
- Preparation of aluminum oxide films at low temperatures by a hot wall technique
- Dependence of Cathodoluminescent and Electrical Properties of Phosphors with Conducting Layer by Sol-Gel Method on Layer Thickness
- Improvement of Low Voltage Cathodoluminescent Properties of Zinc Sulfide Phosphors by Sol-Gel Method
- Focusing Characteristics of Double-Gated Field-Emitter Arrays with a Lower Height of the Focusing Electrode
- Preparation and cathodoluminescence of nanostructured ZnO materials
- Electron emission from ferroelectric BaTiO_3
- Preparation and Cathodoluminescence of Nanostructured ZnO Materials
- Preparation and cathodoluminescence of nanostructured ZnO materials (電子ディスプレイ)
- Study of excimer laser doping process in CdTe
- Doping and characterization for ZnO:N films grown by radical induced remote plasma metaloganic chemical vapor deposition
- Zn_Cd_xO/ZnO Heterostructures for Visible Light Emitting Devices
- Hydroxyl-Radical-Assisted Growth of ZnO Films by Remote Plasma Metal-Organic Chemical Vapor Deposition
- Characterization of Wurtzite Zn_Cd_xO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Zn_Cd_xO Film Growth Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- OH Radical Activation of AnO Growth in Remote Plasma Metalorganic Chemical Vapor Deposition
- Properties of Sputter-Deposited CdS/CdTe Heterojunction Photodiode
- Carrier Transport Properties of Sputter-Deposited CdS/CdTe Heterojunction
- Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
- Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
- Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate
- Photo-Current Multiplication Phenomenon of Amorphous Silicon-Based Multilayer Photodiodes Fabricated on Crystalline Silicon Substrate : Semiconductors
- Pulsed Laser Deposition of Transparent Conducting Indium Tin Oxide Films in Magnetic Field Perpendicular to Plume : Surfaces, Interfaces, and Films
- Large Transmittance Changes Near the Ultraviolet Region Observed on a Laminated Multilayer Structure of Ga_2O_3 and In_2O_3 Prepared by the Pulsed Laser Deposition Method
- Micro-Textured Milky ZnO:Ga Thin Films Fabricated by Pulsed Laser Deposition Using Second-Harmonic-Generation of Nd:YAG Laser
- Optical Recording in Ga and In-Doped Zinc Oxide Thin Films Grown by Radio-Frequency Magnetron Sputtering
- Large Transmittance Changes Induced in Ga-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition
- Laser Doping Technique for 2-6 Semiconductors,ZnSe and CdTe (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (FED and EL Displays)
- Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Substrate
- Preparation of Heavily N-Type ZnSe Doped by Iodine in Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition
- Growth of p-type ZnSe Films by Radical Assisted MOCVD Method
- Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triisobutyle Aluminum
- Thin Film Deposition in the Afterglows of N_2 and H_2 Microwave Plasmas
- The Role of Hydrogen Atoms in Afterglow Deposition of Silicon Thin Films
- Preparation of ZnO Thin Films Deposited by Plasma Chemical Vapor Deposition for Application to Ultraviolet-cut Coating : Nuclear Science, Plasmas, and Electric Discharges
- Numerical Analysis of Underwater Acoustic Lens Using Wide-Angle Parabolic Equation Method
- Measurement of Copper Drift in Methylsilsesquiazane-Methylsilsesquioxane Dielectric Films
- Measurement of Copper Drift in Methylsilsesquioxane Dielectric Films
- Radical Emissions and Anomalous Reverse Flames Appearing in Upward-Increasing Magnetic Fields
- Amorphous Silicon Avalanche Photodiode Films Using a Functionally Graded Superlattice Structure
- Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Superlattice Structure
- Gated Volcano-Shaped Field Emitters with Sharp Polycrystalline-Silicon Tips
- Growth of microcrystalline Si films in cathode-type rf GD at high SiH_4 concentration
- Preparation of Polycrystalline Silicon Thin Films by Cathode-Type RF Glow Discharge Method
- Growth of Highly Oriented Silicon Films on Si(100) and Al_2O_3(0112) by Cathode-type rf Glow Discharge Method
- Growth of Y_2O_2S:Eu Thin Films by Reactive Magnetron Sputtering and Electroluminescent Characteristics
- Characteristics of Y_2O_3:Eu/ZnS/Y_2O_3:Eu Red Light Emitting Electroluminescent Devices
- Structure and Luminescent Property of Y_2O_2S:Eu Thin Films Prepared by Magnetron Sputtering
- X-Ray Imaging Sensor Using a Polycrystalline Cadmium Telluride-Hydrogenated Amorphous Silicon Heterojunction
- Optoelectrical Properties of Hydrogenated Amorphous Silicon-Polycrystalline Cadmium Telluride Heterojunctions
- Amorphous Silicon Resistive Sea for Silicon Vidicon Targets
- Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p^+-ZnSe by Excimer Laser Doping Technique
- Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge
- Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions
- Deposition of SiN_x Thin Film Using μ-SLAN Surface Wave Plasma Source
- Optimum Gas Pressure of Soft Vacuum Pyroelectric Vidicon
- Lag and Resolution Related with Current Distribution of Electron Beam in Camera Tubes
- Influence of Bonding Wire on Electron Beam in Camera Tube with NEA Cold Cathode
- Remote Plasma Deposition of a-SiC:H Films Using Novel Source Material
- Mechanism of Plasma Assisted a-SiC:H Film Deposition
- Variation of Stress and Hardness of a-Sic:H Films with Film Composition
- Remote Plasma SiO_2 Deposition by Tetraethoxysilane with Chemically and Energetically Different Atomic Species
- Photoluminescent Properties of a-SiC:H Films Deposited by Organosilanes in Remote H2 Plasma
- Superiority of O(^1D) atom for solid and gas phase reactions over O(^3P) atom
- Properties of Atomic Oxygen obtained from Thermodynamically Non-equilibrium High Temperature Plasma
- Emission and Focusing Characteristics of a Quintuple-Gated Field Emitter Array
- Reverse Current Characteristics of Hydrogenated Amorphous Silicon-Crystalline Silicon Heterojunctions
- Variation of the Recombination Coefficient of Atomic Oxygen on Pyrex Glass with Applied RF Power
- A New Concept for the High-Speed Optical Position-Sensitive Devices
- Fabrication of Volcano-Structured Double-Gate Field Emitter Array by Etch-Back Technique
- Atomic Number and Electron Density Measurement Using a Conventional X-ray Tube and a CdTe Detector
- Downstream Gas Temperature Variation of Glow and Plasmoidal Oxygen Radio Frequency Discharges
- Characterization of Wurtzite Zn1-xCdxO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Optical Properties of Wurtzite Zn1-xCdxO Films Grown by Remote-Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Characterization of MgxZn1-xO Films Grown by Remote-Plasma-Enhanced Metalorganic Chemical Vapor-Deposition using bis-Ethylcyclopentadienyl Magnesium