Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)

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We introduce a growth technique to grow homogeneous In_xGa_<1-x>Sb ternary bulk crystal and a method to measure the composition profiles in the InGaSb solution. In_xGa_<1-x>Sb bulk crystal was grown on a GaSb seed under a constant temperature gradient using a GaSb (seed)/InSb/GaSb (feed) sandwich sample. During growth, heat pulse technique was applied to estimate the growth rate. Homogeneous In_<0,03>Ga_<0.47>Sb crystal was grown by cooling the sample at an optimized value estimated by the temperature gradient and the growth rate. It was also demonstrated that the X-ray penetration method was a good method to measure the composition profiles in the solution.
2009-05-07