Koyama T | Research Institute Of Electronics Shizuoka University

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概要

• KOYAMA Tadanobuの詳細を見る
• 同名の論文著者
• Research Institute Of Electronics Shizuoka Universityの論文著者

関連著者

• Koyama T

  Research Institute Of Electronics Shizuoka University

• Hayakawa Y

  Research Institute Of Electronics Shizuoka University

• OZAWA Tetsuo

  Shizuoka Institute of Science and Technology

• Morii Hisashi

  Research Institute Of Electronics Shizuoka University

• Aoki Toru

  Shizuoka Univ. Hamamatsu Jpn

• Inatomi Yuko

  Japan Aerospace Exploration Agency Kanagawa Jpn

• Koyama Tadanobu

  Research Institute of Electronics, Shizuoka University

• Hayakawa Yasuhiro

  Research Institute of Electronics, Shizuoka University

• BALAKRISHNAN K.

  静岡大

• Balakrishnan K.

  静岡大学電子工学研究所

• Balakrishnan Krishnan

  名城大学理工学部材料機能工学科

• 熊川 征司

  静岡大学 電子研

• Aoki Toru

  Research Institute Of Electronics Shizuoka University

• K バラクリシュナン

  静岡大学電子工学研究所

• Koyama Tadanobu

  Research Institute Of Electronics Shizuoka University

• Hayakawa Yasuhiro

  Research Institute Of Electronics Shizuoka University

• Aoki Toru

  Research Institute Of Electronics Shizuoka University・graduate School Of Electronic Science And Tech

• RAJESH Govindasamy

  Research Institute of Electronics, Shizuoka University

• MOMOSE Yoshimi

  Research Institute of Electronics, Shizuoka University

• TANAKA Akira

  Research Institute of Electronics, Shizuoka University

• INATOMI Yuko

  Japan Aerospace Exploration Agency

• Rajesh Govindasamy

  Research Institute Of Electronics Shizuoka University

• Momose Yoshimi

  Research Institute Of Electronics Shizuoka University

• Tanaka Akira

  Research Institute Of Electronics Shizuoka University

• Tanaka Akira

  Research And Development Phadia Kk

• Aoki Toru

  Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan

• OZAWA Tetsuo

  Shizuoka Industrial Foundation

• Zhang Guoqiang

  静岡大学電子科学研究科

• Balakrishnan Krishnan

  Electrotechnical Laboratory

• Hayakawa Yoshinori

  Institute Of Basic Medical Sciences University Of Tsukuba

• IMAISHI Nobuyuki

  Institute of Advanced Material Study, Kyushu University

• Dao Le.

  Adv. Mat. Res. Lab. Univ. Du Quebec Inrs

• Dost Sadik

  Dept. Of Mech. Eng. University Of Victoria

• KUMAGAWA Masashi

  Research Institute of Electronics, Shizuoka University

• 杉村 誠

  Shizuoka Univ. Hamamatsu Jpn

• 杉村 誠

  岐阜大学農学部獣医学科家畜臨床繁殖学研究室:(現)愛知県西尾保健所

• Koyama Tadanobu

  静岡大学電子工学研究所

• Kumagawa Masashi

  静岡大学電子科学研究科

• Hayakawa Yasuhiro

  静岡大学電子科学研究科

• BALAKRISHNAN Krishnan

  Research Institute of Electronics, Shizuoka University

• OKANO Yasunori

  Faculty of Eng., Shizuoka University

• OZAWA Tetsuo

  Dept. of Electrical Eng., Shizuoka Inst. of Sci. & Tech.

• KIMURA Tadashi

  Research Institute of Electronics, Shizuoka University

• KOMATSU Hideki

  Research Institute of Electronics, Shizuoka University

• MURAKAMI Noriaki

  Research Institute of Electronics, Shizuoka University

• NAKAMURA Tetsuo

  Research Institute of Electronics, Shizuoka University

• ARAFUNE Koji

  Research Institute of Electronics, Shizuoka University

• MIYAZAWA Masafumi

  Faculty of Eng., Shizuoka University

• HIRATA Akira

  Dept. of Chemical Eng., Waseda Univ.

• Kumagawa Masashi

  Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut

• Imaishi Nobuyuki

  Institute Of Advanced Material Study Kyushu University

• Kimura Tadashi

  Research Institute Of Electronics Shizuoka University

• Okano Yasunori

  Faculty Of Eng. Shizuoka University

• Hirata Akira

  Dept. Of Chemical Eng. Waseda Univ.

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著作論文

• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
• In situ observation of composition profiles in the solution by X-ray penetration method
• Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed
• Influence of Te impurity on morphology of GaSb epilayer grown on GaSb (001) patterned substrate by liquid phase epitaxy
• LPE growth of In_xGa_1-xSb pyramidal epilayer on GaSb(001) patterned substrate
• Growth of In_xGa_As Epilayers on Different Types of Patterned GaAs(100) Substrates
• Study on the LPE Growth of InxGaAs Bridge and ELO Layers on GaAs{111} Substrates
• EXPERIMENTAL AND NUMERICAL ANALYSES OF CRYSTALLIZATION PROCESSES OF In_Ga_Sb UNDER DIFFERENT GRAVITY CONDITIONS
• Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications
• Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments

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