Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the dissolution process of GaSb into InSb melt by numerical simulations using the finite volume method. In addition, the dissolution process was in-situ observed by the X-ray penetration method. Rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich structure of sample was considered for the numerical analysis and the same structure of sample was used for the X-ray penetration experiment. The numerical and experimental results were comparatively analysed. From the results, it was found that the quantity of the dissolved GaSb seed (at the low temperature region) was larger than that of the feed (at the high temperature region). The numerical simulation results supported the experimental results well. Both the experiment and the simulation provide deep insight into the dissolution process and composition profile in the solution during the dissolution process of ternary alloy semiconductor crystal growth.
- 2011-06-01
著者
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Morii Hisashi
Research Institute Of Electronics Shizuoka University
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OZAWA Tetsuo
Shizuoka Institute of Science and Technology
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Aoki Toru
Shizuoka Univ. Hamamatsu Jpn
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Inatomi Yuko
Japan Aerospace Exploration Agency Kanagawa Jpn
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Koyama T
Research Institute Of Electronics Shizuoka University
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Hayakawa Y
Research Institute Of Electronics Shizuoka University
関連論文
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