Morii Hisashi | Research Institute Of Electronics Shizuoka University

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著作論文

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method
Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
In situ observation of composition profiles in the solution by X-ray penetration method
Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments
Atomic Number and Electron Density Measurement Using a Conventional X-ray Tube and a CdTe Detector
The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method

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