The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method

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概要

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• Si dissolution into Ge melt and crystal growth of SiGe was in-situ observed by X-ray penetration method. The rectangular shaped sandwich sample of Si (seed)/Ge/Si(feed) was used for the experiment. The penetrated X-ray intensities through the sample were recorded by rectangular shaped CdTe detector as a function of time and temperature. The experimental results demonstrate that the dissolution of Si seed was larger compared to Si feed crystal. Dissolution lengths result agreed well with numerical results. From the experimental and numerical dissolution length results. The dissolution process of Si into Ge melt was strongly influenced by gravity induced solutal convection. Moreover, the crystal growth of SiGe was clearly observed from the drastic variation of penetrated X-ray intensity near the growth interface. The growth mechanism for the observed SiGe growth process was discussed based on the penetrated X-ray intensity profile and composition profile measured by EPMA.

• 一般社団法人電子情報通信学会の論文
• 2013-05-09

著者

• Ikeda Hiroya

  Research Institute Of Electronics Shizuoka University

• Morii Hisashi

  Research Institute Of Electronics Shizuoka University

• OZAWA Tetsuo

  Shizuoka Institute of Science and Technology

• INATOMI Yuko

  Japan Aerospace Exploration Agency

• Momose Yoshimi

  Research Institute Of Electronics Shizuoka University

• Koyama Tadanobu

  Research Institute Of Electronics Shizuoka University

• Hayakawa Yasuhiro

  Research Institute Of Electronics Shizuoka University

• TATSUOKA Hirokazu

  Faculty of Engineering, Shizuoka University

• Tatsuoka Hirokazu

  Faculty Of Engineering Shizuoka University

• Aoki Toru

  Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan

• ARIVANANDHAN Mukannan

  Research Institute of Electronics, Shizuoka University

• OMPRAKASH Muthusamy

  Research Institute of Electronics, Shizuoka University

• ARUNKUMAR Raman

  Research Institute of Electronics, Shizuoka University

• OKANO Yasunori

  Osaka University

• MOORTHYBABU Sridharan

  Crystal Growth Centre, Anna University

• OMPRAKASH Muthusamy

  Research Institute of Electronics, Shizuoka University:Graduate School of Science and Technology, Shizuoka University

• MORII Hisashi

  Research Institute of Electronics, Shizuoka University

• OZAWA Tetsuo

  Shizuoka Industrial Foundation

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