In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method
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概要
- 論文の詳細を見る
- 2010-09-15
著者
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Morii Hisashi
Research Institute Of Electronics Shizuoka University
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OZAWA Tetsuo
Shizuoka Institute of Science and Technology
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Aoki Toru
Shizuoka Univ. Hamamatsu Jpn
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Hayakawa Y
Research Institute Of Electronics Shizuoka University
関連論文
- In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
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