Inatomi Yuko | Japan Aerospace Exploration Agency Kanagawa Jpn

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概要

• INATOMI Yukoの詳細を見る
• 同名の論文著者
• Japan Aerospace Exploration Agency Kanagawa Jpnの論文著者

関連著者

• Inatomi Yuko

  Japan Aerospace Exploration Agency Kanagawa Jpn

• Koyama T

  Research Institute Of Electronics Shizuoka University

• Hayakawa Y

  Research Institute Of Electronics Shizuoka University

• Morii Hisashi

  Research Institute Of Electronics Shizuoka University

• OZAWA Tetsuo

  Shizuoka Institute of Science and Technology

• Aoki Toru

  Shizuoka Univ. Hamamatsu Jpn

• Koyama Tadanobu

  Research Institute of Electronics, Shizuoka University

• Hayakawa Yasuhiro

  Research Institute of Electronics, Shizuoka University

• Aoki Toru

  Research Institute Of Electronics Shizuoka University・graduate School Of Electronic Science And Tech

• RAJESH Govindasamy

  Research Institute of Electronics, Shizuoka University

• MOMOSE Yoshimi

  Research Institute of Electronics, Shizuoka University

• TANAKA Akira

  Research Institute of Electronics, Shizuoka University

• INATOMI Yuko

  Japan Aerospace Exploration Agency

• Aoki Toru

  Research Institute Of Electronics Shizuoka University

• Rajesh Govindasamy

  Research Institute Of Electronics Shizuoka University

• Momose Yoshimi

  Research Institute Of Electronics Shizuoka University

• Koyama Tadanobu

  Research Institute Of Electronics Shizuoka University

• Hayakawa Yasuhiro

  Research Institute Of Electronics Shizuoka University

• Tanaka Akira

  Research Institute Of Electronics Shizuoka University

• Tanaka Akira

  Research And Development Phadia Kk

• Aoki Toru

  Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan

• OZAWA Tetsuo

  Shizuoka Industrial Foundation

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著作論文

• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
• Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications
• Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments

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