Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (シリコン材料・デバイス)
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概要
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Selective epitaxial growth of GaAs layers on SiN_x, masked Si doped semi-insulating GaAs (100) substrates were performed by current controlled liquid phase epitaxy (CCLPE). Te doped GaAs epitaxial layers were grown on circularly patterned GaAs (100) substrates at a cooling rate of 40℃/h with and without applied electric current. Surface morphology of (100) facet of the grown layer, the vertical and lateral growth rates were improved to a great extent under applied electric current. A thick layer of 337μm with a lateral thickness of 268μm was achieved at 6h growth with an applied current density of 20Acm^<-2>. The epitaxial growth was realized by electromigration of the solute and supercooling by a constant rate of furnace cooling. The electromigration of solute atoms enhanced the over all epitaxial growth.
- 社団法人電子情報通信学会の論文
- 2009-05-07
著者
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Deivasigamani Mouleeswaran
Research Institute of Electronics, Shizuoka University
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Koyama Tadanobu
Research Institute of Electronics, Shizuoka University
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Hayakawa Yasuhiro
Research Institute of Electronics, Shizuoka University
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Koyama Tadanobu
Research Institute Of Electronics Shizuoka University
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Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
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Deivasigamani Mouleeswaran
Research Institute Of Electronics Shizuoka University
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