Growth kinetic study of Liquid Phase Electro Epitaxial growth of InAs : a three dimensional simulation approach(NCCG-36)
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概要
- 論文の詳細を見る
A 3D growth kinetic model has been developed to study the electro-epitaxial growth of InAs from In-rich solution. The governing equations for the electro-epitaxial growth are solved simultaneously by numerical simulation technique and studied the growth rate with and without feed for different experimental growth conditions. The calculated growth rates are compared with available experimental results and the results are discussed in detail.
- 日本結晶成長学会の論文
- 2006-11-01
著者
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Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
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Dhanasekaran R.
Crystal Growth Centre Anna University
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Mouleeswaran D.
Research Institute of Electronics, Shizuoka University
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Hayakawa Y.
Research Institute of Electronics, Shizuoka University
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Mouleeswaran D.
Research Institute Of Electronics Shizuoka University
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Hayakawa Y.
Research Institute Of Electronics Shizuoka University
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Mouleeswaran D.
Crystal Growth Centre, Anna University
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Dhanasekaran R.
Research Institute of Electronics, Shizuoka University
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