Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (電子デバイス)
スポンサーリンク
概要
- 論文の詳細を見る
Selective epitaxial growth of GaAs layers on SiN_x, masked Si doped semi-insulating GaAs (100) substrates were performed by current controlled liquid phase epitaxy (CCLPE). Te doped GaAs epitaxial layers were grown on circularly patterned GaAs (100) substrates at a cooling rate of 40℃/h with and without applied electric current. Surface morphology of (100) facet of the grown layer, the vertical and lateral growth rates were improved to a great extent under applied electric current. A thick layer of 337μm with a lateral thickness of 268μm was achieved at 6h growth with an applied current density of 20Acm^<-2>. The epitaxial growth was realized by electromigration of the solute and supercooling by a constant rate of furnace cooling. The electromigration of solute atoms enhanced the over all epitaxial growth.
- 2009-05-07
著者
-
Deivasigamani Mouleeswaran
Research Institute of Electronics, Shizuoka University
-
Koyama Tadanobu
Research Institute of Electronics, Shizuoka University
-
Hayakawa Yasuhiro
Research Institute of Electronics, Shizuoka University
-
Koyama Tadanobu
Research Institute Of Electronics Shizuoka University
-
Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
-
Deivasigamani Mouleeswaran
Research Institute Of Electronics Shizuoka University
関連論文
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (電子デバイス)
- Effect of temperature on the formation of ZnS nanostructures and properties (シリコン材料・デバイス)
- Effect of temperature on the formation of ZnS nanostructures and properties (電子デバイス)
- Effect of temperature on the formation of ZnS nanostructures and properties (電子部品・材料)
- EXPERIMENTAL AND NUMERICAL ANALYSES OF CRYSTALLIZATION PROCESSES OF In_Ga_Sb UNDER DIFFERENT GRAVITY CONDITIONS
- Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (シリコン材料・デバイス)
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (電子部品・材料)
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- LPE Ga_In_xSb Multigrading Layers with Cut-off Wavelength up to 4.71 μm (x=0.75)
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals(III) : Physical Acoustics
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals(II) : Physical Acoustics
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals : Physical Acoustics
- Composition Conversion Mechanism of InSb into InGaSb
- Liquid Flow Patterns under the Existence of Ultrasonic Vibrations
- Effect of Ultrasonic Vibrations on InSb Pulled Crystals
- Influence of Mechanical Vibrations on Microscopic Growth Rates in GaSb Pulled Crystals
- On the Ultrasonic Wave-Introduced Crystal Pulling Method
- Two-Dimensional Model on Impurity Segregation in InSb Pulled Crystal
- Composition Modulations of In_xGa_Sb Crystals in Current Controlled Liquid Phase Epitaxy
- Effect of Ultrasonic Vibrations on Pulled Crystals : High Power Ultrasonics
- Spreading Resistance of InSb Crystals Pulled under Ultrasonic Vibrations
- An Improved Czochralski Technique for Growing Single Crystals with High Homogeneity
- Growth kinetic study of Liquid Phase Electro Epitaxial growth of InAs : a three dimensional simulation approach(NCCG-36)
- Composition Conversion Mechanism of InSb into InGaSb
- Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Crystal Growth of InGaSb Alloy Semiconductor at International Space Station : Preliminary Experiments