Composition Modulations of In_xGa_<1-x>Sb Crystals in Current Controlled Liquid Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-04-20
著者
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Hayakawa Yasuhiro
Research Institute of Electronics, Shizuoka University
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KUMAGAWA Masashi
Research Institute of Electronics, Shizuoka University
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Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
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Kumagawa Masashi
Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut
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TAKABE Yoshiyuki
Research Institute of Electronics, Shizuoka University
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Takabe Yoshiyuki
Research Institute Of Electronics Shizuoka University
関連論文
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (電子デバイス)
- Effect of temperature on the formation of ZnS nanostructures and properties (シリコン材料・デバイス)
- Effect of temperature on the formation of ZnS nanostructures and properties (電子デバイス)
- Effect of temperature on the formation of ZnS nanostructures and properties (電子部品・材料)
- Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
- EXPERIMENTAL AND NUMERICAL ANALYSES OF CRYSTALLIZATION PROCESSES OF In_Ga_Sb UNDER DIFFERENT GRAVITY CONDITIONS
- Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (シリコン材料・デバイス)
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (電子部品・材料)
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- LPE Ga_In_xSb Multigrading Layers with Cut-off Wavelength up to 4.71 μm (x=0.75)
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals(III) : Physical Acoustics
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals(II) : Physical Acoustics
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals : Physical Acoustics
- Composition Conversion Mechanism of InSb into InGaSb
- Liquid Flow Patterns under the Existence of Ultrasonic Vibrations
- Effect of Ultrasonic Vibrations on InSb Pulled Crystals
- Influence of Mechanical Vibrations on Microscopic Growth Rates in GaSb Pulled Crystals
- On the Ultrasonic Wave-Introduced Crystal Pulling Method
- Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 μm
- Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
- Optical Properties of High-Quality Ga_In_xAs_Sb_y/InAs Grown by Liquid-Phase Epitaxy
- Actual Carrier Mobility Determination of GaInAsSb/InAs Grown by Liquid Phase Epitaxy
- Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes
- Two-Dimensional Model on Impurity Segregation in InSb Pulled Crystal
- Composition Modulations of In_xGa_Sb Crystals in Current Controlled Liquid Phase Epitaxy
- Effect of Ultrasonic Vibrations on Pulled Crystals : High Power Ultrasonics
- Spreading Resistance of InSb Crystals Pulled under Ultrasonic Vibrations
- Epitaxial Growth with Light Irradiation
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers
- Micron-Sized Facets in Pulled GaSb Crystals
- Wavy Impurity Patterns beside the Twin Boundary in Pulled GaSb Crystals
- Hydrogen Etching of Silicon Carbide
- Twin Pits in the Facet Region of GaSb Pulled Crystals
- On the Boundary between Facet and Off-Facet in Pulled GaSb Single Crystals
- Growth Rate of SiC Crystals from Cr Solution in the Traveling Solvent Method
- An Improved Czochralski Technique for Growing Single Crystals with High Homogeneity
- Growth kinetic study of Liquid Phase Electro Epitaxial growth of InAs : a three dimensional simulation approach(NCCG-36)
- Composition Conversion Mechanism of InSb into InGaSb
- Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Crystal Growth of InGaSb Alloy Semiconductor at International Space Station : Preliminary Experiments