Hydrogen Etching of Silicon Carbide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1969-04-05
著者
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KUMAGAWA Masashi
Research Institute of Electronics, Shizuoka University
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YAMADA Shoji
Research Institute of Electronics, Shizuoka University
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Kuwabara Hiroshi
Research Institute Of Electronics Shizuoka University
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Kumagawa Masashi
Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut
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Yamada Shoji
Research Institute Of Electronics Shizuoka University
関連論文
- Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
- EXPERIMENTAL AND NUMERICAL ANALYSES OF CRYSTALLIZATION PROCESSES OF In_Ga_Sb UNDER DIFFERENT GRAVITY CONDITIONS
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- LPE Ga_In_xSb Multigrading Layers with Cut-off Wavelength up to 4.71 μm (x=0.75)
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals(III) : Physical Acoustics
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals(II) : Physical Acoustics
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals : Physical Acoustics
- Composition Conversion Mechanism of InSb into InGaSb
- Liquid Flow Patterns under the Existence of Ultrasonic Vibrations
- Effect of Ultrasonic Vibrations on InSb Pulled Crystals
- Influence of Mechanical Vibrations on Microscopic Growth Rates in GaSb Pulled Crystals
- On the Ultrasonic Wave-Introduced Crystal Pulling Method
- Electrochromic Absorption Spectra of Mo_cW_O_3 Films : A: Applications and Fundamentals
- Absorption Bands of Eleclrochemically-Colored Films of WO_3, MoO_3 and Mo_cW_O_3
- Electron Diffusion in Amorphous Tungsten Oxide Films
- Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 μm
- Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
- Optical Properties of High-Quality Ga_In_xAs_Sb_y/InAs Grown by Liquid-Phase Epitaxy
- Actual Carrier Mobility Determination of GaInAsSb/InAs Grown by Liquid Phase Epitaxy
- Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes
- The Effect of Cu Additive on A.C. Conductivity in a-As_2Se_3
- An Ultrasonic Motor Using a Shear and Bending Mode of a Disk Resonator : Ultrasonic Motor
- Two-Dimensional Model on Impurity Segregation in InSb Pulled Crystal
- Composition Modulations of In_xGa_Sb Crystals in Current Controlled Liquid Phase Epitaxy
- Effect of Ultrasonic Vibrations on Pulled Crystals : High Power Ultrasonics
- Spreading Resistance of InSb Crystals Pulled under Ultrasonic Vibrations
- Epitaxial Growth with Light Irradiation
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers
- Effect of Silver Additive on Frequency-Dependent Conductivity of Amorphous As_2Se_3
- Preparation of As_2Se_3 Single Crystals
- Micron-Sized Facets in Pulled GaSb Crystals
- Wavy Impurity Patterns beside the Twin Boundary in Pulled GaSb Crystals
- Hydrogen Etching of Silicon Carbide
- Twin Pits in the Facet Region of GaSb Pulled Crystals
- On the Boundary between Facet and Off-Facet in Pulled GaSb Single Crystals
- Growth Rate of SiC Crystals from Cr Solution in the Traveling Solvent Method
- An Improved Czochralski Technique for Growing Single Crystals with High Homogeneity
- Variation of Photoconductivity Spectra of Amorphous As_2Se_3 with Light Chopping Frequency
- Properties of Photoluminescence from ZnTe-ZnSe Superlattices
- Long-Term Photocurrent Decay in Amorphous As_2Se_3 Doped with Ag and Cu
- Temperature Dependence of A.C. Conductivity in Glassy As_Se_Ag_x
- Composition Conversion Mechanism of InSb into InGaSb
- Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity