Influence of Mechanical Vibrations on Microscopic Growth Rates in GaSb Pulled Crystals
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-02-05
著者
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Hayakawa Yasuhiro
Research Institute of Electronics, Shizuoka University
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Quang Nguyen
Graduate School Of Electronic Science And Engineering Shizuoka University
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KUMAGAWA Masashi
Research Institute of Electronics, Shizuoka University
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Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
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Kumagawa Masashi
Research Institute Of Electronics Shizuoka University
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Kumagawa Masashi
Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut
関連論文
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- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
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- EXPERIMENTAL AND NUMERICAL ANALYSES OF CRYSTALLIZATION PROCESSES OF In_Ga_Sb UNDER DIFFERENT GRAVITY CONDITIONS
- Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate
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- Crystal Growth of InGaSb Alloy Semiconductor at International Space Station : Preliminary Experiments