Crystal Growth of InGaSb Alloy Semiconductor at International Space Station : Preliminary Experiments
スポンサーリンク
概要
- 論文の詳細を見る
- 2011-09-01
著者
-
RAJESH Govindasamy
Research Institute of Electronics, Shizuoka University
-
Rajesh Govindasamy
Research Institute Of Electronics Shizuoka University
-
Inatomi Yuko
Institute Of Space And Astronautical Science
-
Momose Yoshimi
Research Institute Of Electronics Shizuoka University
-
Koyama Tadanobu
Research Institute Of Electronics Shizuoka University
-
Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
-
Ozawa Tetsuo
Department Of Clinical And Laboratory Medicine Faculty Of Medicine Toyama Medical And Pharmaceutical
-
Tanaka Akira
Research And Development Phadia Kk
-
Inatomi Yuko
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency
-
ARIVANANDHAN Mukannan
Research Institute of Electronics, Shizuoka University
-
SANKARANARAYANAN Krishnasamy
Research Institute of Electronics, Shizuoka University
-
OKANO Yasunori
Graduate school of Engineering Science, Osaka University
関連論文
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (電子デバイス)
- Preparation of aluminum oxide films at low temperatures by a hot wall technique
- Effect of temperature on the formation of ZnS nanostructures and properties (シリコン材料・デバイス)
- Effect of temperature on the formation of ZnS nanostructures and properties (電子デバイス)
- Effect of temperature on the formation of ZnS nanostructures and properties (電子部品・材料)
- EXPERIMENTAL AND NUMERICAL ANALYSES OF CRYSTALLIZATION PROCESSES OF In_Ga_Sb UNDER DIFFERENT GRAVITY CONDITIONS
- Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (シリコン材料・デバイス)
- Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE (電子部品・材料)
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- LPE Ga_In_xSb Multigrading Layers with Cut-off Wavelength up to 4.71 μm (x=0.75)
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals(III) : Physical Acoustics
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals(II) : Physical Acoustics
- Effect of Ultrasonic Vibrations on the Growth of In_xGa_Sb Mixed Crystals : Physical Acoustics
- Composition Conversion Mechanism of InSb into InGaSb
- Liquid Flow Patterns under the Existence of Ultrasonic Vibrations
- Effect of Ultrasonic Vibrations on InSb Pulled Crystals
- Influence of Mechanical Vibrations on Microscopic Growth Rates in GaSb Pulled Crystals
- On the Ultrasonic Wave-Introduced Crystal Pulling Method
- Growth of ZnO on Sapphire (0001) by the Vapor Phase Epitaxy Using a Chloride Source
- Time-of-Flight Secondary Mass Spectrometry Analysis of Isotope Composition for Measurement of Self-Diffusion Coefficient
- Mutation Study of Antithrombin : The Roles of Disulfide Bonds in Intracellular Accumulation and Formation of Russell Body-Like Structures
- Liquid Phase Epitaxial Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
- LPE Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
- Growth of GaAsP on GaP by Compositional Conversion
- liquid Phase Epitaxy of GaAs by Yo-yo Solute Feeding Method
- Homogeneous GaInSb Bulk Alloy Pulling by Solute-Feeding Czochralski Method
- Two-Dimensional Model on Impurity Segregation in InSb Pulled Crystal
- Composition Modulations of In_xGa_Sb Crystals in Current Controlled Liquid Phase Epitaxy
- Effect of Ultrasonic Vibrations on Pulled Crystals : High Power Ultrasonics
- Spreading Resistance of InSb Crystals Pulled under Ultrasonic Vibrations
- Food-Dependent Exercise-Induced Anaphylaxis : Importance of Omega-5 Gliadin and HMW-Glutenin as Causative Antigens for Wheat-Dependent Exercise-Induced Anaphylaxis
- Management of Pregnancy with Congenital Antithrombin III Deficiency : Two Case Reports and a Review of the Literature
- Conversion of GaAs Layer Grown on GaP Substrate to GaAsP in LPE System
- Pulling Technique of a Homogeneous GaInSb Alloy under Solute-Feeding Conditions
- Numerical Analysis of Current Transport in a BSIT
- LPE Growth of Uniform (Ga, Al)P Alloy Crystal
- p(Ga, Al)Sb/Lightly-Doped n(In, Ga)Sb Heterojunction Photodiode
- pIn_xGa_Sb-nGa_Al_ySb Heterojunction Photodiodes : B-2: GaAs FET/LED AND DETECTOR
- Genetic Analysis of Two Female Patients with Incomplete Denys-Drash Syndrome
- 強磁場における蛋白質の結晶成長過程のその場観察
- Scaling Analysis of Semiconductor Crystal Growth from the Liquid Phase in an Axis Static Magnetic Field
- 強磁場における蛋白質の核生成と結晶成長過程に関する研究
- An Improved Czochralski Technique for Growing Single Crystals with High Homogeneity
- Formation of Bare Porous Surface on 6H-SiC Substrates by Photo-Electrochemical Etching
- Growth kinetic study of Liquid Phase Electro Epitaxial growth of InAs : a three dimensional simulation approach(NCCG-36)
- Measurement of Optical-Absorption Coefficient in the Deletion Region of GaAs Schottky-Barrier Photodiode
- Void-Free Cuprous Oxide Tube Prepared by Thermal Oxidation on Outside of Copper Tube
- Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching
- Composition Conversion Mechanism of InSb into InGaSb
- Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity
- Heavily p-Type Silicon Carbide Thick Layer Growth by Low-Temperature Liquid Phase Epitaxy
- Multilayered Graphene from SiC Films via Pyrolysis in Vacuum
- Growth Modes of Silicon Carbide in Low-Temperature Liquid Phase Epitaxy
- 微小重力環境下における混晶半導体バルク結晶成長
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Growth of SiGe Crystals by the Traveling Liquidus Zone (TLZ) Method : Preliminary Experiments on the Ground
- Crystal Growth of InGaSb Alloy Semiconductor at International Space Station : Preliminary Experiments