pIn_xGa_<1-x>Sb-nGa_<1-y>Al_ySb Heterojunction Photodiodes : B-2: GaAs FET/LED AND DETECTOR

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• TANAKA Akira

  Research Institute of Electronics, Shizuoka University

• SUKEGAWA Tokuzo

  Research Institute of Electronics, Shizuoka University

• Mizuki Toshio

  Research Institute Of Electronics Shizuoka University:(present Address)central Research Laboratory S

• Sukegawa Tokuzo

  Research Institute Of Electronics Shizuoka University

• Sugimoto Yoshimasa

  Research Institute Of Electronics Shizuoka University

• MIZUKI Toshio

  Graduated School of Electronic Science and Technology, Shizuoka University

• Tanaka Akira

  Research Institute Of Electronics Shizuoka University

• Tanaka Akira

  Research And Development Phadia Kk

関連論文

• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
• Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
• Liquid Phase Epitaxial Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
• LPE Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
• Growth of GaAsP on GaP by Compositional Conversion
• liquid Phase Epitaxy of GaAs by Yo-yo Solute Feeding Method
• Homogeneous GaInSb Bulk Alloy Pulling by Solute-Feeding Czochralski Method
• Food-Dependent Exercise-Induced Anaphylaxis : Importance of Omega-5 Gliadin and HMW-Glutenin as Causative Antigens for Wheat-Dependent Exercise-Induced Anaphylaxis
• Conversion of GaAs Layer Grown on GaP Substrate to GaAsP in LPE System
• Conversion from GaAs to GaAsP by Annealing a GaAs Layer on GaP in Ga-As-P Solutiom
• Pulling Technique of a Homogeneous GaInSb Alloy under Solute-Feeding Conditions
• Numerical Analysis of Current Transport in a BSIT
• LPE Growth of Uniform (Ga, Al)P Alloy Crystal
• p(Ga, Al)Sb/Lightly-Doped n(In, Ga)Sb Heterojunction Photodiode
• pIn_xGa_Sb-nGa_Al_ySb Heterojunction Photodiodes : B-2: GaAs FET/LED AND DETECTOR
• Formation of Bare Porous Surface on 6H-SiC Substrates by Photo-Electrochemical Etching
• Emission Distributions from NEA Cold Cathodes
• Measurement of Optical-Absorption Coefficient in the Deletion Region of GaAs Schottky-Barrier Photodiode
• Void-Free Cuprous Oxide Tube Prepared by Thermal Oxidation on Outside of Copper Tube
• Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching
• Heavily p-Type Silicon Carbide Thick Layer Growth by Low-Temperature Liquid Phase Epitaxy
• Multilayered Graphene from SiC Films via Pyrolysis in Vacuum
• Growth Modes of Silicon Carbide in Low-Temperature Liquid Phase Epitaxy
• Crystal Growth of InGaSb Alloy Semiconductor at International Space Station : Preliminary Experiments

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