pIn_xGa_<1-x>Sb-nGa_<1-y>Al_ySb Heterojunction Photodiodes : B-2: GaAs FET/LED AND DETECTOR
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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TANAKA Akira
Research Institute of Electronics, Shizuoka University
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SUKEGAWA Tokuzo
Research Institute of Electronics, Shizuoka University
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Mizuki Toshio
Research Institute Of Electronics Shizuoka University:(present Address)central Research Laboratory S
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Sukegawa Tokuzo
Research Institute Of Electronics Shizuoka University
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Sugimoto Yoshimasa
Research Institute Of Electronics Shizuoka University
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MIZUKI Toshio
Graduated School of Electronic Science and Technology, Shizuoka University
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Tanaka Akira
Research Institute Of Electronics Shizuoka University
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Tanaka Akira
Research And Development Phadia Kk
関連論文
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
- Liquid Phase Epitaxial Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
- LPE Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
- Growth of GaAsP on GaP by Compositional Conversion
- liquid Phase Epitaxy of GaAs by Yo-yo Solute Feeding Method
- Homogeneous GaInSb Bulk Alloy Pulling by Solute-Feeding Czochralski Method
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- Conversion of GaAs Layer Grown on GaP Substrate to GaAsP in LPE System