Multilayered Graphene from SiC Films via Pyrolysis in Vacuum
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概要
- 論文の詳細を見る
We demonstrate multilayered graphene formation from SiC films via pyrolysis in vacuum, where the SiC films with micro-3C and amorphous crystal structures have been grown by hydrogen radical-enhanced chemical vapor deposition. The Raman spectra composed of D, G, and 2D bands indicates multilayered graphene formed by controlling the substrate temperature in the 1250 to 1600 °C range and the duration time. We found that criterion parameters of the multilayered graphene such that both the peak intensity ratio of D-band against G-band and full width at half maximum of G-band are mainly dominated by pyrolysis temperature and duration time in vacuum as well as crystallinity of SiC films used.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Tanaka Akira
Research And Development Phadia Kk
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Temmyo Jiro
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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Temmyo Jiro
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatu 432-8011, Japan
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Ogawa Yasuhiro
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatu 432-8011, Japan
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Nakamura Atsusi
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatu 432-8011, Japan
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Tanaka Akira
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatu 432-8011, Japan
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