Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity
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概要
- 論文の詳細を見る
In order to investigate the effects of diffusion and convection on the melt mixing of semiconductors, experiments under microgravity in space and 1-g on earth were conducted. Sandwich combinations of In/GaSb/Sb solids closed in a BN cylinder were heated up to 733° C in space and 744° C on earth, and they were then cooled rapidly. In both samples, many needle crystals were distributed in the whole area. It was observed that the melt mixing in space was controlled by diffusion which was represented with an error function, and the diffusion coefficient of indium was given by a value of 2.4×10-4 cm2/ s. In the earth sample, however, the indium concentration distribution followed an exponential curve. This indicated that both factors, diffusion and thermal convection, have contributed to the mixing of semiconductor melts.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-15
著者
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Okano Yasunori
Department of Materials Engineering Science, Osaka University
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Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
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YODA Shin-ichi
NASDA
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OIDA Toshihiko
NASDA
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Fujiwara Syogo
Department Of Chemical Engineering Waseda University
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Kumagawa Masashi
Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut
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Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
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Imaishi Nobuyuki
Institute Of Advanced Material Study Kyushu University
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Hirata Akira
Department Of Chemical Engineering Waseda University
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Okitsu Kazuhiko
Research Institute Of Electronics Shizuoka University
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Kumagawa Masashi
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432, Japan
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Yamaguchi Tomuo
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432, Japan
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Yoda Shin-ichi
NASDA, 2-2-1 Sengen, Tsukuba 305, Japan
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Okano Yasunori
Department of Materials Science and Chemical Engineering, Shizuoka University,
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Okitsu Kazuhiko
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432, Japan
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Hayakawa Yasuhiro
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432, Japan
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Imaishi Nobuyuki
Institute of Advanced Material Study, Kyusyu University, 6-1 Kasuga-Koen, Kasuga 816, Japan
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Okano Yasunori
Department of Chemical Engineering, Waseda University
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