Effect of a radiation shield on thermal stress field during Czochralski crystal growth of silicon.
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概要
- 論文の詳細を見る
For silicon CZ crystal growth, the effect of a radiation shield inserted in a furnace on the thermal stress field was studied theoretically by the finite-element method based on thermoelastic analysis.<BR>It is found that a radiation shield lowers the maximum (thermally induced) shear stress, since it reduces the temperature gradient, especially in the radial direction, in a crystal. There is an optimum location for placement of the radiation shield so as to realize the smallest shear stress. From the viewpoint of thermal stress, a radiation shield can allow a higher pull rate of defect-free crystal.
- The Society of Chemical Engineers, Japanの論文
著者
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Imaishi Nobuyuki
Institute Of Advanced Material Study Kyushu University
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HOZAWA MITSUNORI
Chemical Research Institute of Non-Aqueous Solutions, Tohoku Univ.
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Hozawa Mitsunori
Chemical Research Institute of Non-Aqueous Solutions, Tohoku University
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TSUKADA TAKAO
Chemical Research Institute of Non-Aqueous Solutions, Tohoku University
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