Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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Gong X
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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YAMAGUCHI Tomuo
Research Institute of Electronics, Shizuoka University
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AOYAMA Mitsuru
Research Institute of Electronics, Shizuoka University
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Rowell Nelson
National Research Council
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KAN Hirofumi
Central Research Laboratory, Hamamatsu Photonics K.K.
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KUMAGAWA Masashi
Research Institute of Electronics, Shizuoka University
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SUZUKI Isao
Research Institute of Electronics, Shizuoka University
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GONG Xiuying
Central Research Laboratory, Hamamatsu Photonics K.K.
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WANG Aiguo
Institute for National Measurement Standards National Research Council
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RINFRET Robert
Institute for National Measurement Standards National Research Council
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WANG Aiguo
National Research Council, Institute for National Measurement Standards
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RINFRET Robert
National Research Council, Institute for National Measurement Standards
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Yamaguchi Taichi
Superconductivity Research Dept. Material Research Lab. Fujikura Ltd. :(present Address)quality Assu
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Kan Hirofumi
Central Research Institute Hamamatsu Photonics K. K.
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Aoyama Mitsuru
Research Institute Of Electronics Shizuoka University
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Suzuki Isao
Research Institute Of Electronics Shizuoka University
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Kumagawa Masashi
Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut
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Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
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Kan H
Hamamatsu Photonics K.k. Hamakita Jpn
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Aoyama Makoto
Advanced Photon Research Center Kansai Research Establishment Japan Atomic Energy Research Institute
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