Electrical Properties of Melt-Epitaxy-Grown InAs_<0.04>Sb_<0.96> Layers with Cutoff Wavelength of 12μm
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Gong X
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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YAMAGUCHI Tomuo
Research Institute of Electronics, Shizuoka University
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Yamaguchi T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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GAO Yu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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GONG Xiu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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GUI Yong
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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DAI Ning
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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