Optical Properties of InAsSb Single Crystals with Cutoff Wavelengths of 8-12μm Grown by Melt-Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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Gong X
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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YAMAGUCHI Tomuo
Research Institute of Electronics, Shizuoka University
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Yamaguchi T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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GAO Yu
Institute of Semiconductor and Information Technology, College of Electronics and Information Engine
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GONG Xiu
Institute of Semiconductor and Information Technology, College of Electronics and Information Engine
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