Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures
スポンサーリンク
概要
- 論文の詳細を見る
Light-emitting diodes (LEDs) in the 3 to 5 $\mu$m wavelength range have been fabricated from InAs/InAsSb/InAsPSb heterostructures grown by liquid-phase epitaxy (LPE) between 520 and 500$^\circ$C@. Temperature dependence of the performance for the LEDs was studied using a Fourier transform infrared (FTIR) measurement system with double modulation. Room-temperature operation of LEDs was realized. Under a peak current of 5 A (2% duty cycle), the output powers of the diodes were between 150 and 500 $\mu$W indicating their potential applications for CO2 and CO gas sensors.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2000-09-15
著者
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Rowell Nelson
National Research Council
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GONG Xiu
Central Research Laboratory, Hamamatsu Photonics K.K.
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Iida Takefumi
Central Research Laboratory
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Kan Hirofumi
Central Research Institute Hamamatsu Photonics K. K.
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Makino Takamitsu
Central Research Laboratory
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Aoyama Mitsuru
Research Institute Of Electronics Shizuoka University
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Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
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Gao Yu
Research Institute Of Electronics Shizuoka University
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Watanabe Kenzo
Research Institute Of Electronics
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Rowell Nelson
National Research Council, Ottawa, Canada K1A 0R6
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Gao Yu
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Gong Xiu
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita 434-8601, Japan
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Kan Hirofumi
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita 434-8601, Japan
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Yamaguchi Tomuo
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Iida Takefumi
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita 434-8601, Japan
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Watanabe Kenzo
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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