Room-Temperature 1.56 μm Electroluminescence of Highly Oriented β-FeSi_2/Si Single Heterojunction Prepared by Magnetron-Sputtering Deposition

概要

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β-FeSi_2/Si light-emitting devices were prepared by growing continuous and highly oriented β-FeSi_2 films on Si (111) substrates using RF magnetron-sputtering deposition with a Fe target. In-plane X-ray diffraction reveals that the epitaxial relationship is such that (001)_<β-Fesi_2>//(110)_<Si>, medicating a (110) orientation in the growth direction. Post annealing was performed at 830℃ and Al electrodes were deposited on both p-β-FeSi_2 and n-Si sides. Room-temperature 1.56μm electroluminescence was clearly observed from such a simple structure for the first time. Compared with the previously reported results forβ-FeSi_2 balls orβ-FeSi_2 precipitates buried in Si, the injection current density is more than one order of magnitude lower, indicating that the nonradiative recombination was effectively suppressed for the junction consisting of a continuous film.
社団法人応用物理学会の論文
2002-11-01