High-Efficiency 894-nm Laser Emission of Laser-Diode-Bar-Pumped Cesium-Vapor Laser

スポンサーリンク

概要

• 論文の詳細を見る
• 2009-03-25

著者

• Matsui Hiroki

  Central Research Laboratory Hamamatsu Photonics K.k.

• KAN Hirofumi

  Central Research Laboratory, Hamamatsu Photonics K.K.

• HIRUMA Teruo

  Central Research Laboratory, Hamamatsu Photonics K. K.

• ZHENG Yujin

  Central Research Laboratory, Hamamatsu Photonics K.K.

• NIIGAKI Minoru

  Central Research Laboratory, Hamamatsu Photonics K.K.

• MIYAJIMA Hirofumi

  Central Research Laboratory, Hamamatsu Photonics K.K.

• Kan Hirofumi

  Central Research Institute Hamamatsu Photonics K. K.

• Niigaki Minoru

  Central Research Laboratory Hamamatsu Photonics K.k.

• Miyajima Hirofumi

  Central Research Laboratory Hamamatsu Photonics K. K.

• Zheng Yujin

  Central Research Laboratory Hamamatsu Photonics K.k.

• Zheng Yujin

  Applied Physics Department Chongqing University

• Kan H

  Hamamatsu Photonics K.k. Hamakita Jpn

• Hirohata Toru

  Central Research Laboratory Hamamatsu Photonics K.k.

関連論文

• Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
• Strong Mechanoluminescence from UV-Irradiated Spinels of ZnGa_2O_4 : Mn and MgGa_2O_4:Mn
• Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
• Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
• Investigation of the Polarization-Induced Charges in Modulatlon Doped Al_xGa_N/GaN Heterostructures through Capacitance-Voltage Profiling and Simulation
• Influence of Ferroelectric Polarization on the Properties of Two-Dimensional Electron Gas in Pb(Zr_Ti_)O_3/Al_xGa_N/GaN Structures
• AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
• High-power diode-pumped zigzag slab lasers and applications
• Development of HALNA DPSSL for the inertial fusion energy
• Diode-Pumped Glass Laser (10J x 10Hz) Development
• Quasi-CW 110kW AlGaAs Laser Diode Array Module for Inertial Fusion Energy Laser Driver : Optics and Quantum Electronics
• Design and Performance of a Diode-Pumped Nd:Silica-Phosphate Glass Zig-Zag Slab Laser Amplffier for Inertial Fusion Energy : Optics and Quantum Electronics
• Thermal- and Spectral-Characteristics of High-Power Quasi-Continuous Wave 940-nm InGaAs Diode Laser Arrays
• Bandwidth Narrowing of an All-Solid-State Optical Parametric Oscillator Amplifier System
• Thermal Birefringence Effect on the Performance of a Laser-Diode Pumped Solid-State Laser
• Temperature Dependence of Emission Cross-section of Yb:glass
• High-Sensitivity Two-Dimensional Observation of Thermal Birefringence Compensation in Laser-Diode Pumped Nd:Glass Laser Rods
• Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels
• Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon
• InNAsSb Single Crystals with Cutoff Wavelength of 11-13.5 μm Grown by Melt Epitaxy
• Light-Emitting Diodes with a Peak Wavelength of 5.38 μm from Liquid-Phase Epitaxial Ga_ In_ Sb/InSb Heterostructures(Semiconductors)
• Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs_Sb_/InAs_P_Sb_ Heterostructures
• InAs_Sb_y Single Crystals with Cutoff Wavelength of 8-12 μm Grown by a New Method
• Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 μm
• Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
• Optical Properties of High-Quality Ga_In_xAs_Sb_y/InAs Grown by Liquid-Phase Epitaxy
• Actual Carrier Mobility Determination of GaInAsSb/InAs Grown by Liquid Phase Epitaxy
• Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes
• High-Efficiency 894-nm Laser Emission of Laser-Diode-Bar-Pumped Cesium-Vapor Laser
• Effects of Reflective Coatings on Performance of Divergence-Narrowed External-Cavity Laser-Diode Arrays
• High-Power Operation of 1cm Laser Diode Bars on Funryu Heat Sink Cooled by Fluorocarbons
• High-Brightness Narrow-Bandwidth High-Power Laser-Diode Array Based on an External-Cavity Technique
• Characteristics of Laser Diode Bar and Stack with Jet-Type, Water-Cooled Heatsink
• Single-Wavelength 5.6kW Direct Diode Laser with a High-Efficiency Beam Combination
• Deterioration of Superconductive Character of Y-Ba-Cu Oxides in Time Duration : Electrical Properties of Condensed Matter
• Electron Irradiation of Y-Ba-Cu Oxides : Electrical Properties of Condensed Matter
• Melt Epitaxial Growth of High Quality InAs_Sb_y and In_xGa_Sb single crystals with cutoff wavelength of 7-12 μm
• High-Efficiency Bridge Double Phase-Conjugate Mirrors in Cu-Doped (K_Na_)_(Sr_Ba_)_Nb_2O_6 Crystals
• Phase-Conjugate Imaging Properties in High-Efficiency KNSBN:Cu Double Phase-Conjugate Mirror
• Semilinear Self-Pumped Phase-Conjugate Mirror Using Two Couplcd Cu : (K_Na_)_(Sr_Ba_)_Nb_2O_6 Crystals
• Generation of Forward Phase-Conjugate Beam by Cu : KNSBN-Cat Type Self-Pumped Phase-Conjugator
• Recovery Phenomenon of mechanoluminescence from Ca2Al2SiO7: Ce by irradiation with ultraviolet light
• Polarized Memory Switching in Amorphous Se Film
• Germanium- and Zinc-Doped P-type InAsSb Single Crystals with a Cutoff Wavelength of 12.5 μm
• Study of Photocurrent Properties of GaN Ultraviolet Photoconductor Grown on 6H-SiC Substrate
• Stress Property of SiGe Alloy Deposited by Very Low Pressure Chemical Vapor Deposition
• Formation Mechanism of Self-Pumped Phase-Conjugate Mirror Using a Cu-Doped (K_Na_)_(Sr_Ba_)_Nb_2O_6 Crystal ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Stable High-Efficiency Double-Phase-Conjugate Mirror in a Cu-Doped Potassium Sodium Strontium Barium Niobate Crystal
• Enhancement of Time Response of Self-Pumped Phase-Conjugate Mirror in KNSBN:Cu Crystal Using Cylindrical Lenses
• Etch Pit Observation of Very Thin {001}-GaAs Layer by Molten KOH
• Photoluminescence Study of (Ga, Al) As Layer Grown from Ga Solution Pre-Heated at High Temperature
• Efficient operation of a cesium-vapor laser longitudinally pumped by a fine-tunable bandwidth-narrowed laser-diode bar
• Uncooled InAsSb photoconductors with long wavelength
• Frequent Detection of Hepatitis C Virus Subtype 3a (HCV-3a) Isolates in Thailand by PCR Using Subtype-Specific Primers
• Near-infrared photocathode using surface plasmon resonance
• Extremely High Quantum Photoyield from Cesiated Polycrystalline Diamond Films
• Electroluminescence and Response Characterization of $\beta$-FeSi2-Based Light-Emitting Diodes
• Time-Resolved 1.5 μm-Band Photoluminescence of Highly Oriented $\beta$-FeSi2 Films Prepared by Magnetron-Sputtering Deposition
• Room-Temperature 1.56 μm Electroluminescence of Highly Oriented β-FeSi_2/Si Single Heterojunction Prepared by Magnetron-Sputtering Deposition
• High-Power, High-Brightness 1cm Laser Diode Bar with V-Shaped Optical Waveguide Structure
• Room Temperature 1.58 μm Photoluminescence and Electric Properties of Highly Oriented β-FeSi_2 Films Prepared by Magnetron-Sputtering Deposition
• Design and Operation of High-Energy and High-Average-Power Diode-Pumped Single Nd:YAG Amplifier with Stimulated-Brillouion-Scattering Phase Conjugate Mirror
• Characteristics of Laser Diode Bar and Stack with Jet-Type, Water-Cooled Heatsink
• Effective Suppression of Beam Divergence for High-Power Laser-Diode Stack Based on External-Cavity Technique
• Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
• High-Brightness Narrow-Bandwidth High-Power Laser-Diode Array Based on an External-Cavity Technique
• Efficient Operation of a Cesium-Vapor Laser Longitudinally Pumped by a Fine-Tunable Bandwidth-Narrowed Laser-Diode Bar
• Near-Infrared Photocathode Using Surface Plasmon Resonance
• InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5 μm Grown by Melt Epitaxy
• High-Brightness Narrow-Bandwidth Operation of a Broad-Area Laser Diode with a Rear External Cavity
• Narrow-Bandwidth High-Brightness External-Cavity Laser Diode Bar
• Numerical Simulation of Conversion Efficiency and Beam Quality Factor in Second Harmonic Generation with Diffraction and Pump Depletion
• Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures

もっと見る 閉じる

スポンサーリンク