Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
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概要
- 論文の詳細を見る
We have succeeded in fabricating ultraviolet (UV) GaN/AlGaN laser diodes without any crack generation on a whole 2-in. sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. The UV laser diodes lased in the peak wavelength range from 355.4 to 361.6 nm under a pulsed current operation at room temperature. We have also investigated both parameters, material gain and optical-internal loss in GaN/AlGaN multiple quantum wells (MQWs). The actual threshold currents of the UV laser diodes were practically in agreement with the estimated threshold current from these parameters. This layer structure is one of the solutions for the purpose of high-yield production of UV photonic devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-15
著者
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Kan Hirofumi
Central Research Institute Hamamatsu Photonics K. K.
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Kuwabara Masakazu
Central Research Laboratory Hamamatsu Photonics K. K.
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Kan Hirofumi
Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan
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Yoshida Harumasa
Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan
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Takagi Yasufumi
Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan
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Kuwabara Masakazu
Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan
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