Effects of Nano- and Microscale SiO

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概要

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• We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano- and microscale SiO<inf>2</inf>masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic force microscopy (AFM) measurements revealed a surface roughness of 0.63 nm and a submicron pit density of {\sim}7.8 \times 10^{7} cm^-2. Photoluminescence (PL) intensity was enhanced by a factor of 9.0 in comparison with that of a planar sample. Omega full-width at half-maximum (FWHM) values of the (11\bar{2}0) X-ray rocking curve along the c- and m-axes were 553 and 788 arcsec, respectively. A plan-view cathodoluminescence (CL) mapping image showed high luminescence intensity on the SiO<inf>2</inf>masks.

• 2013-08-25

著者

• Amano Hiroshi

  Department of Cardiology and Pneumology, Dokkyo University School of Medicine

• Baik Kwang

  Department of Materials Science and Engineering, Hongik University, Yeongi, Chungnam 339-701, Korea

• HONDA Yoshio

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

• YAMAGUCHI Masahito

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

• Seo Yong

  Optoelectronics Laboratory, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Son Ji-Su

  Department of Electrical Engineering and Computer Science and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Miao Cao

  Department of Electrical Engineering and Computer Science and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Hwang Sung-Min

  Optoelectronics Laboratory, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Baik Kwang

  Department of Materials Science and Engineering, Hongik University, Jochiwon, Chungnam 339-701, Korea

• Amano Hiroshi

  Department of Electrical Engineering and Computer Science and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Honda Yoshio

  Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Honda Yoshio

  Department of Chemistry, Faculty of Science, Kanazawa University

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