Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-15
著者
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TAKEUCHI Tetsuya
Department of Physics,Faculty of Science,Osaka University
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山口 滋
Department Of Physics School Of Science Tokai University
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Yamaguchi Shigeo
Department of Electrical Engineering, Kyoto University
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Wetzel Christian
High Tech Research Center Meijo University:(present Address)uniroyal Optoelectronics
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Takeuchi Tetsuya
Department Of Electrical And Electronic Engineering Meijo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Tanaka T
Corporate Research And Development Laboratories Pioneer Corporation
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Wetzel Christian
名城大学理工学部電気電子工学科
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IWAYA Motoaki
Department of Electrical and Electronic Engineering, Meijo University
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Takeuchi T
Department Of Chemical Engineering Science Yokohama National University
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WETZEL Christian
Department of Electrical and Electronic Engineering, Meijo University
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Iwaya M
Faculty Of Science And Technology Meijo University
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Tanaka T
Ceramic Operation Ibiden Co. Ltd.
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Yamaguchi Shigeo
Department Of Electrical Electronic And Information Engineering Kanagawa University:energy Electroni
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Iwaya Motoaki
Faculty of Science and Technology, Meijo University
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Tanaka Tooru
Faculty of Science and Technology, Meijo University
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