Iwaya M | Faculty Of Science And Technology Meijo University

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著作論文

Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy
Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
Microscopic Investigation of Al_Ga_N on Sapphire
Stress and Defect Control in GaN Using Low Temperature Interlayers
Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
Low-Intensity Ultraviolet Photodetectors Based on AlGaN
Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate

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