KAMIYAMA Satoshi | Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

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概要

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著作論文

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
ZrB_2 Substrate for Nitride Semiconductors
Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
High-Power UV-Light-Emitting Diode on Sapphire
Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates

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