Kamiyama Satoshi | Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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概要
- KAMIYAMA Satoshiの詳細を見る
- 同名の論文著者
- Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo Universityの論文著者
関連著者
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University
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Kamiyama Satoshi
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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Kamiyama S
Faculty Of Science And Technology Meijo University
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Akasaki I
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Akasaki Isamu
Faculty of Science and Technology, Meijo University
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Akasaki I
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi
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Iwaya M
Faculty Of Science And Technology Meijo University
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天野 洋
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Iwaya Motoaki
Faculty of Science and Technology, Meijo University
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Amano H
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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IWAYA Motoaki
Department of Electrical and Electronic Engineering, Meijo University
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天野 洋
千葉大・園芸・応動昆
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天野 洋
千葉大
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AMANO Hiroshi
Faculty of Horticulture, Chiba University
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KAMIYAMA Satoshi
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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AKASAKI Isamu
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Amano H
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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KAMIYAMA Satoshi
High-Tech Research Center, Meijo University
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Amano Hiroshi
Faculty Of Horticulture Chiba University
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天野 洋
千葉大学大学院・園芸学研究科・応用動物昆虫学研究室
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ISHITANI Akihiko
ULSI Device Development Laboratories, NEC Corporation
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Endo Kazuhiko
Division Of Biomaterials And Bioengineering Department Of Oral Rehabilitation School Of Dentistry He
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Endo Kazuhiko
Silicon Systems Research Laboratories Nec Corporation
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LESAICHERRE Pierre-Yves
ULSI Device Development Laboratories, NEC Corporation
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IWAYA Motoaki
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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Noro Tadashi
Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University
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Ogura Takashi
Silicon Systems Research Laboratories Nec Corporation
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Ogura Takeshi
Ntt Cyber Space Laboratories
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TATSUMI Toru
System Devices Research Laboratories, NEC Corporation
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Lesaicherre Pierre-yves
Ulsi Device Development Laboratories Nec Corporation
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Yamamoto Tetsushi
Material And Life Science Graduate School Of Engineering Osaka University
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Endo Kazuhiko
Department Of Dental Materials Science School Of Dentistry Health Science University Of Hokkaido
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IWAMOTO Toshiyuki
Silicon Systems Research Labs., NEC Corporation
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IKARASHI Nobuyuki
Silicon Systems Research Labs., NEC Corporation
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YAMAMOTO Toyoji
Silicon Systems Research Labs., NEC Corporation
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MANABE Kenzo
Silicon Systems Research Laboratories, NEC Corporation
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KAMIYAMA Satoshi
Silicon Systems Research Laboratories, NEC Corporation
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TATSUMI Toru
Silicon Systems Research Laboratories, NEC Corporation
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Lesaicherre P‐y
Ulsi Device Development Laboratories Nec Corporation
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Tatsumi Toru
System Devices Research Laboratories Nec Corporation
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Tatsumi Toru
Silicon Systems Research Laboratories Nec Corporation
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Ogura T
Ntt Network Innovation Laboratories
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Kamiyama Satoshi
Silicon Systems Research Laboratories Nec Corporation
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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TSUYUKUCHI Norio
Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University
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KAMIYAMA Satoshi
Department of Materials Science and Engineering, and Nano-factory, Meijo University
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Manabe Katsuya
System Devices Research Laboratories Nec Corporation
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Yamamoto Toyoji
Silicon Systems Research Laboratories Nec Corporation
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Manabe Kenzo
Silicon Systems Research Laboratories Nec Corporation
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Iwamoto T
Keio Univ. Fujisawa‐shi Jpn
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Ishitani A
O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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Yamamoto T
Toray Research Center Inc.
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Ishitani Akihiko
Ulsi Device Development Laboratories Nec Corporation
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IKARASHI Nobuyuki
NEC Corporation, Device Platforms Research Laboratories
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Ikarashi N
Nec Corporation Device Platforms Research Laboratories
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Ikarashi Nobuyuki
Silicon Systems Research Laboratories Nec Corporation
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Ikarashi Nobuyuki
System Devices Research Laboratories Nec Corporation
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Hirose Yoshikazu
Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University
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Kamiyama Satoshi
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Tsuyukuchi Norio
Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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KAWASHIMA Takeshi
Department of Mechanical Engineering, Kanagawa Institute of Technology
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SUDA Jun
Department of Electronic Science and Engineering, Kyoto University
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TAKEUCHI Tetsuya
Department of Physics,Faculty of Science,Osaka University
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Otani S
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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Watanabe Satoshi
Agilent Technologies
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Otani S
National Inst. Materials Sci. Jpn
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Otani Shigeki
National Institute For Materials Science Advanced Materials Laboratory
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Matsunami H
Kyoto Univ. Kyoto Jpn
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NAKAMURA Ryo
Department of Food Science ande Tecknology, School of Agriculture, Nagoya University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Suda J
Sasebo National Coll. Of Technol. Nagasaki
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Suda J
Kyoto Univ. Kyoto Jpn
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Suda Jun
Department Of Electronics Science And Engineering Kyoto University
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Wetzel Christian
High Tech Research Center Meijo University:(present Address)uniroyal Optoelectronics
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Ando K
Kyushu Sangyo Univ. Fukuoka‐shi Jpn
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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YAMADA Norihide
Agilent Technologies
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AMANO Hiroshi
High-Tech Research Center, Meijo University
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AKASAKI Isamu
High-Tech Research Center, Meijo University
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Takeuchi Tetsuya
Department Of Electrical And Electronic Engineering Meijo University
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Katoh H
Toyohashi Univ. Technol. Toyohashi Jpn
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Watanabe Hirohito
Ulsi Device Development Laboratories Nec Corporation
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Akasaki Isamu
Meijo University Department Of Electrical And Electronic Engineering
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Nakamura Ryo
Department Of Applied Biological Sciences School Of Agricultural Sciences Nagoya University
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Nakamura Ryo
Department Of Electrical & Electronic Engineering Meljo University
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Tanaka T
Corporate Research And Development Laboratories Pioneer Corporation
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Otani S
National Inst. Materials Sci. Ibaraki Jpn
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Otani Shigeki
National Institute For Materials Science
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YAMADA Norihide
Hewlett-Packard Laboratories
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Kinoshita H
Univ. Hyogo Hyogo Jpn
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KINOSHITA Hiroyuki
Kyocera Corporation Youkaichi Plant
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Kashima Takayuki
Department Of Materials Science And Engineering And Nano-factory Meijo University
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Tsuda Michinobu
Department Of Materials Science And Engineering And Nano-factory Meijo University:kyocera Corporatio
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Wetzel Christian
名城大学理工学部電気電子工学科
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Fujii Takahiro
Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University
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Takeuchi T
Department Of Chemical Engineering Science Yokohama National University
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HAYASHI Nobuaki
Department of Electrical and Electronic Engineering, Meijo University
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KANEKO Yawara
Agilent Laboratories
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Yamada N
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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KAMIYAMA Satoshi
High Tech Research Center, Meijo University
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AMANO Hiroshi
High Tech Research Center and Department of Materials Science and Engineering, Meijo University
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AKASAKI Isamu
High Tech Research Center and Department of Materials Science and Engineering, Meijo University
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Ando K
Graduate School Of Life And Environmental Sciences University Of Tsukuba
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Terao Shinji
Department Of Electrical And Electronic Engineering Meijo University
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Isomura Kimio
The Authors Are With The Department Of Electrical And Electronic Engineering Meijo University
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Suzuki Hiroshi
ULSI Device Development Laboratories, NEC Corporation
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Ando Koichi
ULSI Device Development Laboratories, NEC Corporation
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HIROSE Yoshikazu
Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University
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HIROSE Yoshikazu
Department of Materials Science and Engineering, and Nano-factory, Meijo University
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HONSHIO Akira
Department of Materials Science and Engineering, and Nano-factory, Meijo University
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NAGAMATSU Kentaro
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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SATO Toshiyuki
The authors are with the Department of Electrical and Electronic Engineering, Meijo University
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IWAYA Motoaki
The authors are with the Department of Electrical and Electronic Engineering, Meijo University
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UKAI Tsutomu
The authors are with the Department of Electrical and Electronic Engineering, Meijo University
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KAMIYAMA Satoshi
The authors are with High-Tech Research Center, Meijo University
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AMANO Hiroshi
The authors are with the Department of Electrical and Electronic Engineering, Meijo University
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AKASAKI Isamu
The authors are with the Department of Electrical and Electronic Engineering, Meijo University
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Ukai Tsutomu
The Authors Are With The Department Of Electrical And Electronic Engineering Meijo University
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AKASAKI Isamu
the Faculty of Science and Technology and High-Tech Research Center, Meijo Uuiversity
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KAMIYAMA Satoshi
the Faculty of Science and Technology and High-Tech Research Center, Meijo Uuiversity
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AMANO Hiroshi
the Faculty of Science and Technology and High-Tech Research Center, Meijo Uuiversity
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Tanaka T
Ceramic Operation Ibiden Co. Ltd.
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Yamada N
Yonezawa Women's College Of Yamagata Prefecture
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Nagata Kensuke
Meijo Univ. Nagoya Jpn
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Akasaki Isamu
Meijo University
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Kawashima Takeshi
Department Of Mechanical Engineering Faculty Of Science And Technology Keio University
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Nakamura Ryo
Department Of Applied Biological Sciences School Of Agricultural Science Nagoya University
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Sato Toshiyuki
The Authors Are With The Department Of Electrical And Electronic Engineering Meijo University
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Hirose Yoshikazu
Department Of Electronics Faculty Of Engineering Osaka University:vlsi Development Center Sanyo Elec
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Kawashima Takeshi
Department Of Chemistry Shool Of Hygienic Sciences Kitasato University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Hayashi Nobuaki
Department Of Electrical And Electronic Engineering Meijo University
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Otani Shigeki
National Inst. Materials Sci. Ibaraki Jpn
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University
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Honshio Akira
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Tanaka Tooru
Faculty of Science and Technology, Meijo University
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Nagamatsu Kentaro
Faculty of Science and Technology, Meijo University
著作論文
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation(High-κ Gate Dielectrics)
- Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)
- Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories)
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
- Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
- The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
- Present and Future Nitride-Based Devices