AKASAKI Isamu | High Tech Research Center and Department of Materials Science and Engineering, Meijo University
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概要
- 同名の論文著者
- High Tech Research Center and Department of Materials Science and Engineering, Meijo Universityの論文著者
関連著者
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AMANO Hiroshi
High Tech Research Center and Department of Materials Science and Engineering, Meijo University
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AKASAKI Isamu
High Tech Research Center and Department of Materials Science and Engineering, Meijo University
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Wetzel Christian
High Tech Research Center Meijo University:(present Address)uniroyal Optoelectronics
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Akasaki I
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Wetzel Christian
名城大学理工学部電気電子工学科
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Akasaki Isamu
Faculty of Science and Technology, Meijo University
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Kamiyama S
Faculty Of Science And Technology Meijo University
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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Akasaki I
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi
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KAMIYAMA Satoshi
High Tech Research Center, Meijo University
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天野 洋
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Akasaki Isamu
High Tech Research Center Meijo University
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WATZEL Christian
High Tech Research Center, Meijo University
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Watzel Christian
High Tech Research Center Meijo University
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Amano Hiroshi
High Tech Research Center Meijo University
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University
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Kamiyama Satoshi
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
著作論文
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
- Piezoelectric Polarization Effects in GaInN/GaN Heterostructures and Some Consequences for Device Design