Akasaki Isamu | Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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概要
- 同名の論文著者
- Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo Universityの論文著者
関連著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Akasaki I
Faculty Of Science And Technology Meijo University
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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Akasaki I
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi
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Kamiyama S
Faculty Of Science And Technology Meijo University
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Amano H
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Amano H
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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KAMIYAMA Satoshi
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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AKASAKI Isamu
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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天野 洋
千葉大
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Takeuchi Tetsuya
Department Of Electrical And Electronic Engineering Meijo University
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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IWAYA Motoaki
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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IWAYA Motoaki
Department of Electrical and Electronic Engineering, Meijo University
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AMANO Hiroshi
Faculty of Horticulture, Chiba University
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山口 滋
Department Of Physics School Of Science Tokai University
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Tanaka T
Corporate Research And Development Laboratories Pioneer Corporation
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Katsuragawa Maki
Meijo University
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KARIYA Michihiko
Department of Electrical and Electronic Engineering, Meijo University
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Takeuchi T
Department Of Chemical Engineering Science Yokohama National University
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Yamaguchi Shigeo
Department Of Electronic Science And Engineering Kyoto University
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TAKEUCHI Tetsuya
Department of Physics,Faculty of Science,Osaka University
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Goto H
Mie Univ. Tsu Jpn
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Goto Hideo
Department Of Electrical Engineering Chubu University
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Wetzel Christian
High Tech Research Center Meijo University:(present Address)uniroyal Optoelectronics
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AMANO Hiroshi
High-Tech Research Center, Meijo University
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AKASAKI Isamu
High-Tech Research Center, Meijo University
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Yamaguchi S
Hitachi Ltd. Tokyo Jpn
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Goto H
Fujitsu Ltd. Kawasaki Jpn
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Kashima Takayuki
Department Of Materials Science And Engineering And Nano-factory Meijo University
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Wetzel Christian
名城大学理工学部電気電子工学科
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Yamaguchi Shinji
Department Of Electrical Engineering Suzuka Technical College
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Yamaguchi Shigeo
High-tech Research Center Meiji University
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Yamaguchi Shigeo
Department Of Physics Tokyo Metropolitan University
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NITTA Shugo
Department of Electrical and Electronic Engineering, Meijo University
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Nitta Shugo
Department Of Electrical And Electronic Engineering Meiji University
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Kariya Michihiko
Department Of Electrical And Electronic Engineering Meijo University
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Zhou Jun
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Zhou Jun
Department Of Electronics School Of Engineering Nagoya University
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Yamaguchi Shigeo
Department of Electrical Engineering, Kyoto University
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Pernot C
Picogiga Courtaboeuf Fra
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Noro Tadashi
Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University
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Nakamura Ryo
Department Of Electrical & Electronic Engineering Meljo University
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ITOH Kenji
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University
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Fujii Takahiro
Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University
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天野 洋
千葉大・園芸・応動昆
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TANAKA Shigeyasu
Department of Biology, Faculty of Science, Shizuoka University
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Balakrishnan Krishnan
名城大学理工学部材料機能工学科
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Balakrishnan Krishnan
Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University
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NAKAMURA Ryo
Department of Food Science ande Tecknology, School of Agriculture, Nagoya University
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天野 浩
名城大学理工学研究科電気電子・情報・材料工学専攻
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Itoh Kikuo
Faculty Of General Education Kumamoto University
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Kato H
Photon Factory High Energy Accelerator Research Organization
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Kato Hiroo
Institute Of Material Structure Science High Energy Accelerator Research Organization
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Kato H
Saitama University
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Kato Hiromichi
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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Tanaka Shigeyasu
Department Of Biology Faculty Of Science Shizuoka University
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Tanaka S
Toshiba Corp. Kawasaki Jpn
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SOTA Shigetoshi
Department of Materials Science, Shimane University
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Kato Hisayuki
Semiconductor Design & Development Center Hitachi Ltd.
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Akasaki Isamu
Department Of Electronics Faculty Of Engineering Nagoya University
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Nakamura Ryo
Department Of Applied Biological Sciences School Of Agricultural Sciences Nagoya University
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SAKAI Hiromitsu
Department of Electrical and Electronic Engineering, Meijo University
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Iida Daisuke
Faculty Of Science And Technology Meijo University
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Tanaka Shin-ichiro
Institute For Molecular Science
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Sakai H
Department Of Electrical And Electronic Engineering Meijo University
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Itoh K
Discrete Device Division Semiconductor Co. Matsushita Electric Industrial Co. Ltd.
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KAMIYAMA Satoshi
High-Tech Research Center, Meijo University
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WETZEL Christian
Department of Electrical and Electronic Engineering, Meijo University
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Sota Shigetoshi
Department Of Electrical And Electronic Engineering Meijo University
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Kato H
Department Of Mechanical And Intelligent Engineering Graduate School Of Engineering Utsunomiya Unive
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SUDA Jun
Department of Electronic Science and Engineering, Kyoto University
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Otani S
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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Nakamura Tetsuya
Department Of Medicine And Biological Science Gunma University Graduate School Of Medicine
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Otani S
National Inst. Materials Sci. Jpn
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Otani Shigeki
National Institute For Materials Science Advanced Materials Laboratory
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Meyer B
Justus-liebig‐univ. Giessen Giessen Deu
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Matsunami H
Kyoto Univ. Kyoto Jpn
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Suzuki H
Communications Res. Lab. Kobe Jpn
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Suda J
Sasebo National Coll. Of Technol. Nagasaki
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Suda J
Kyoto Univ. Kyoto Jpn
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Suda Jun
Department Of Electronics Science And Engineering Kyoto University
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Okuno Eiichi
Department Of Electronics School Of Engineering Nagoya University
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Hayashi K
Kyoto Univ. Kyoto Jpn
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Takeuchi Hideo
Department of Information Electronics, School of Engineering, Nagoya University
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NORO Tadashi
Ceramic Operation, Ibiden Co., Ltd.
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TAKAGI Takashi
Ceramic Operation, Ibiden Co., Ltd.
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BANDOH Akira
Corporate R&D Center, Showa-Denko K.K.
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Katoh H
Toyohashi Univ. Technol. Toyohashi Jpn
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Bandoh Akira
Corporate R&d Center Showa Denko K.k.
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Akasaki Isamu
Meijo University Department Of Electrical And Electronic Engineering
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijo University
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Otani S
National Inst. Materials Sci. Ibaraki Jpn
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Otani Shigeki
National Institute For Materials Science
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YAMADA Norihide
Hewlett-Packard Laboratories
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MEYER Bruno
Physics Institute, Justus-Liebig-University Giessen
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Kinoshita H
Univ. Hyogo Hyogo Jpn
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KINOSHITA Hiroyuki
Kyocera Corporation Youkaichi Plant
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Sasaki Takatomo
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cooperative Research Ce
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Matsubara Hiroyuki
Department Of Computer And Mathematical Sciences Graduate School Of Information Sciences Tohoku Univ
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Nakamura T
Department Of Electrical & Electronic Engineering Meljo University
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KOSAKI Masayoshi
Department of Electrical and Electronic Engineering, Meijo University
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YUKAWA Yohei
Department of Electrical and Electronic Engineering, Meijo University
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KATOH Hisaki
Department of Electrical and Electronic Engineering, Meijo University
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Takeuchi H
Department Of Electrical And Electronic Engineering Meijo University
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KANEKO Yawara
Agilent Laboratories
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Yamada N
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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AMANO Hiroshi
High Tech Research Center and Department of Materials Science and Engineering, Meijo University
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AKASAKI Isamu
High Tech Research Center and Department of Materials Science and Engineering, Meijo University
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Yukawa Yohei
Department Of Electrical And Electronic Engineering Meiji University
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Suzuki H
Univ. Tokyo Tokyo Jpn
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KAWASHIMA Takeshi
Department of Mechanical Engineering, Kanagawa Institute of Technology
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Kawamoto Takeshi
Department of Dental and Medical Biochemistry, Hiroshima University Graduate School of Biomedical Sc
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Watanabe Satoshi
Agilent Technologies
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AMANO Hiroshi
Graduate School of Horticulture, Chiba University
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INAMORI MASAHIKO
Department of Gastroenterology, Yokohama City University School of Medicine
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Inamori Masahiko
Department Of Electrical And Electronic Engineering Meijo University
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Watanabe Akio
Ntional Institute Of Advanced Industrial Science And Technology
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Hofmann D
Ioffe Physical Technical Institute
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Hoffmann A
Technische Univ. Berlin Deu
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Mori Y
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Ota Hiroyuki
Corporate Research And Development Laboratories Pioneer Corporation
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Shiomi Hiromu
Sixon Ltd.
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Imura Masataka
Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University
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YAMADA Norihide
Agilent Technologies
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Takahashi H
Corporate Research And Development Laboratories Pioneer Corporation
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TAKAHASHI Hirokazu
Corporate Research and Development Laboratories, Pioneer Corporation
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WATANABE Atsushi
Corporate Research and Development Laboratories, Pioneer Corporation
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CHIKUMA Kiyofumi
Corporate Research and Development Laboratories, Pioneer Corporation
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TANAKA Toshiyuki
Corporate Research and Development Laboratories, Pioneer Corporation
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KASHIMA Takayuki
High-Tech Research Center, Meijo University
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NAKAMURA Ryo
High-Tech Research Center, Meijo University
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Nakano Kiyotaka
Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University
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Fujimoto Naoki
Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University
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OKADA Narihito
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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ITOH Nobuo
Department of Pathology, Sinshu University Medical School
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Akasaki Isamu
Department Of Electronics School Of Engineering Nagoya University
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Kano Hiroyuki
Toyota Central R & D Labs. Inc.
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TOMITA Kazuyoshi
Department of Surgery and Neurosurgery, Osaka University Medical School
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Watanabe Nobuaki
Department Of Electrical And Electronic Engineering Meijo University
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TANAKA Toshiyuki
Pioneer Electronic Corporation
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KOIKE Masayoshi
Toyoda Gosei Co., Ltd.
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Tanaka Toshiyuki
Devices and Materials Department, Pioneer Electronic Corporation
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HOFMANN Detlev
Ioffe Physical Technical Institute
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LEITER Frank
Physics Institute, Justus-Liebig-University Giessen
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FORSTER Walter
Physics Institute, Justus-Liebig-University Giessen
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ALVES Helder
Physics Institute, Justus-Liebig-University Giessen
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ROMANOV Nikolai
Ioffe Physical Technical Institute
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STEUDE Guido
Physikalisches Institut, Universitat Giessen
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GOLDNER Axel
Institut fur Festkorperphysik der TU Berlin
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HOFFMANN Axel
Institut fur Festkorperphysik der TU Berlin
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KASCHNER Axel
Institut fur Festkorperphysik der TU Berlin
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BECHSTEDT Friedhelm
Institut fur Festkorpertheorie und Theoretische Optik, Friedrich-Schiller-Universitat Jena
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TSUDA Michinobu
Single Crystal Division, Kyocera Corporation
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Makino Takafumi
Faculty Of Science And Technology Meijo University
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Nishinaga Tatau
Department Of Electronics Faculty Of Engineering Nagoya University
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Tsuda Michinobu
Department Of Materials Science And Engineering And Nano-factory Meijo University:kyocera Corporatio
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KOIDE Norikatsu
Toyoda Gosei Co., Ltd.
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Kawamoto Takeshi
Department Of Electronics School Of Engineering Nagoya University
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Kawamoto Takeshi
Department Of Anesthesiology Kansai Denryoku Hospital
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Tomita Kazuyoshi
Department Of Applied Pharmacology Kyoto Pharmaceutical University
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Tomita Kazuyoshi
Department Of Electronics School Of Engineering Nagoya University
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Takahashi Hirokazu
Corporate Research And Development Laboratories Pioneer Corporation
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Takahashi Hisakazu
New Material Research Center Sanyo Electric Co. Ltd.
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Takahashi Hisanori
Technical Department Tokyo Institute Of Technology
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Koide Norikatsu
Toyoda Gosei Co. Ltd.
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Yamaguchi Sadaei
Institute For Materials Research Tohoku University
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Watanabe Akiko
The Institute For Solid State Physics The University Of Tokyo
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KOMORI Miho
Department of Applied Chemistry, Faculty of Engineering, Kyushu Institute of Technology
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HAYASHI Nobuaki
Department of Electrical and Electronic Engineering, Meijo University
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WETZEL Christian
High-Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University
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TAKEUCHI Tetsuya
High-Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University
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KATO Hisaki
Department of Electrical and Electronic Engineering, Meijo University
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ANBE Chitoshi
Department of Electrical and Electronic Engineering, Meijo University
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MIZUMOTO Ryuichi
Department of Electrical and Electronic Engineering, Meijo University
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KANEKO Yawara
Hewlett-Packard Laboratories
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KATSURAGAWA Maki
Department of Electrical and Electronic Engineering, Meijo University
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KAMIYAMA Satoshi
High Tech Research Center, Meijo University
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MOCHIZUKI Shingo
Department of Radiological Technology, Graduate School of Medicine, Nagoya University
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Ponce Fernando
Arizona State Univ. Az Usa
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Ponce Fernando
Department Of Physics Arizona State University
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Wu Zhihao
Department Of Physics Arizona State University
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Alves Helder
Physics Institute Justus-liebig-university Giessen
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Komori Miho
Department Of Electrical And Electronic Engineering Meijo University
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Komori Miho
Department Of Applied Chemistry Faculty Of Engineering Kyushu Institute Of Technology
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Koide Yasuo
Department Of Electronics School Of Engineering Nagoya University
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Steude Guido
Physikalisches Institut Universitat Giessen
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Leiter Frank
Physics Institute Justus-liebig-university Giessen
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Terao Shinji
Department Of Electrical And Electronic Engineering Meijo University
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Watanabe A
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
著作論文
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Microscopic Investigation of Al_Ga_N on Sapphire
- Stress and Defect Control in GaN Using Low Temperature Interlayers
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
- Optical Transitions of the Mg Acceptor in GaN
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
- Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
- Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
- Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
- Optical Properties of Strained AlGaN and GaInN on GaN
- Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
- Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
- 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
- Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
- Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
- Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
- Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
- Present and Future Nitride-Based Devices
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Low-Intensity Ultraviolet Photodetectors Based on AlGaN
- Investigation of the Leakage Current in GaN P-N Junctions
- Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
- Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
- Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
- A Supplement to "Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge"
- Etch Patterns and Dislocation Etch Pits on Germanium with KI-I_2 Redox System
- Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
- Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Etch Patterns in Germanium
- On the Structural Properties of Vapor-Deposited Germanium Layers
- Experimental Studies of Impurity Doping in Vapor Growth of Ge
- Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
- Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors : Seeking Blue Emission
- Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
- Electron Mobility and Drag Effect in p-Type Silicon
- Measurement of Electron Mobility in p-Si by Time-of-Flight Technique
- Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
- Microstructures of GaInN/GaInN Superlattices on GaN Substrates
- High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
- Metal--Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density
- Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE
- Metal-Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density (Special Issue : Recent Advances in Nitride Semiconductors)
- Thermodynamical Analysis and Luminescence Properties of Vapor-Grown ZnSxSe1-x II—Bypass Flow Effect—